Details

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BUY LH28F160S5HNS-L70 https://www.utsource.net/itm/p/942416.html
x8/x16 Flash EEPROM

Below is the parameter table and instructions for the LH28F160S5HNS-L70, which is a 16 Mbit (2 M x 8) low-power static RAM (SRAM).

Parameter Table

Parameter	Symbol	Min	Typ	Max	Unit	Conditions
Supply Voltage	VCC	1.65	1.8	1.95	V	-
Standby Current	ISB	-	1	2	μA	VCC = 1.8V, VPP = 1.8V, f = 0 Hz, T = 25°C
Active Current	IAV	-	10	20	mA	VCC = 1.8V, VPP = 1.8V, f = 100 MHz, T = 25°C
Access Time	tAA	-	10	15	ns	VCC = 1.8V, VPP = 1.8V, f = 100 MHz, T = 25°C
Cycle Time	tCYC	-	10	15	ns	VCC = 1.8V, VPP = 1.8V, f = 100 MHz, T = 25°C
Data Hold Time	tDH	-	0	3	ns	VCC = 1.8V, VPP = 1.8V, f = 100 MHz, T = 25°C
Address Setup Time	tAS	-	5	10	ns	VCC = 1.8V, VPP = 1.8V, f = 100 MHz, T = 25°C
Address Hold Time	tAH	-	0	3	ns	VCC = 1.8V, VPP = 1.8V, f = 100 MHz, T = 25°C
Write Recovery Time	tWR	-	0	3	ns	VCC = 1.8V, VPP = 1.8V, f = 100 MHz, T = 25°C
Power-down Time	tPD	-	0	3	ns	VCC = 1.8V, VPP = 1.8V, f = 100 MHz, T = 25°C
Operating Temperature	Toper	-40	-	85	°C	-
Storage Temperature	Tstg	-65	-	150	°C	-

Instructions

1. Power Supply:

   • Ensure that the supply voltage (VCC) is within the specified range of 1.65V to 1.95V.
   • The power supply should be stable and free from noise to avoid data corruption.

2. Standby Mode:

   • To enter standby mode, set the chip enable (CE) and output enable (OE) pins to high.
   • The standby current (ISB) is typically around 1 μA at 25°C.

3. Active Mode:

   • To enter active mode, set the chip enable (CE) pin to low and the output enable (OE) pin to low.
   • The active current (IAV) can range from 10 to 20 mA depending on the operating frequency and conditions.

4. Access Time:

   • The access time (tAA) is the time it takes for the data to become valid after the address is applied.
   • Ensure that the access time is within the specified range of 10 to 15 ns.

5. Cycle Time:

   • The cycle time (tCYC) is the minimum time required between consecutive read or write operations.
   • It should be at least 10 ns to ensure reliable operation.

6. Data Hold Time:

   • The data hold time (tDH) is the minimum time the data must be held stable after the falling edge of the write enable (WE) signal.
   • It should be at least 0 ns but can be up to 3 ns.

7. Address Setup Time:

   • The address setup time (tAS) is the minimum time the address must be stable before the rising edge of the WE signal.
   • It should be at least 5 ns but can be up to 10 ns.

8. Address Hold Time:

   • The address hold time (tAH) is the minimum time the address must be stable after the falling edge of the WE signal.
   • It should be at least 0 ns but can be up to 3 ns.

9. Write Recovery Time:

   • The write recovery time (tWR) is the minimum time the WE signal must remain low after the address and data are valid.
   • It should be at least 0 ns but can be up to 3 ns.

10. Power-down Time:

    • The power-down time (tPD) is the minimum time required for the device to enter a low-power state after the CE pin is set high.
    • It should be at least 0 ns but can be up to 3 ns.

11. Operating Temperature:

    • The device is designed to operate within a temperature range of -40°C to 85°C.
    • Ensure that the operating environment does not exceed these limits to prevent damage.

12. Storage Temperature:

    • The device can be stored in temperatures ranging from -65°C to 150°C.
    • Store the device in a dry and cool place to ensure long-term reliability.

13. Handling:

    • Handle the device with care to avoid electrostatic discharge (ESD) damage.
    • Use appropriate ESD protection measures when handling the device.

By following these parameters and instructions, you can ensure reliable and efficient operation of the LH28F160S5HNS-L70 SRAM.

(For reference only)