Details

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BUY CY7C185-15VC https://www.utsource.net/itm/p/1047698.html
x8 SRAM

Parameter	Description	Value
Device Type	High-Speed CMOS Static RAM	128K x 8
Package	Plastic Fine Pitch Ball Grid Array (FBGA)	100-Pin
Supply Voltage	VCC	3.3V ± 0.3V
Operating Temperature	Industrial Temperature Range	-40°C to +85°C
Access Time	tAA (Access Time)	15 ns
Data Retention	tDQSQ (Data Hold Time)	2 ns
Cycle Time	tCYC (Minimum Cycle Time)	15 ns
Output Enable	tOE (Output Enable Time)	3 ns
Write Enable	tWP (Write Pulse Width)	3 ns
Address Setup Time	tIS (Address Setup Time)	3 ns
Data Setup Time	tDS (Data Setup Time)	3 ns
Power Consumption	Active Power	250 mW (Typical)
Standby Current	Icc (Standby Current)	10 μA (Max)
Slew Rate	Output Slew Rate	1.5 V/ns (Typical)
Input Clamping	Input Clamp Diodes	Yes
Output Drive	Output Drive Strength	24 mA (Max)
Ordering Information	Package Code	FBGA100

Instructions for Use

1. Power Supply:

   • Ensure the supply voltage (VCC) is within the specified range of 3.0V to 3.6V.
   • Connect the ground (GND) pin to a stable ground reference.

2. Address and Data Lines:

   • Apply the address signals to the appropriate address pins (A0-A16).
   • Data lines (DQ0-DQ7) should be connected to the data bus for read/write operations.

3. Control Signals:

   • Chip Select (CS#): Low to enable the device; high to disable.
   • Output Enable (OE#): Low to enable data output; high to tristate the outputs.
   • Write Enable (WE#): Low to write data to the selected address; high to read data from the selected address.

4. Timing Considerations:

   • Ensure that all timing parameters are met, including access time, cycle time, setup, and hold times.
   • Use appropriate decoupling capacitors near the power pins to minimize noise and ensure stable operation.

5. Handling:

   • Handle the device with care to avoid static damage. Use ESD protection when handling the device.
   • Store the device in a dry environment to prevent moisture damage.

6. Testing:

   • Before integrating the device into a system, perform basic functional tests to verify proper operation.
   • Use a known good test pattern to validate read and write cycles.

7. Layout:

   • Place the device close to the memory controller to minimize signal trace lengths and reduce noise.
   • Use controlled impedance traces for high-speed signals to maintain signal integrity.

8. Documentation:

   • Refer to the datasheet for detailed specifications and additional information.
   • Consult application notes for specific design considerations and best practices.

(For reference only)