SST39SF010A-70-4I-NHE

SST39SF010A-70-4I-NHE

Category: IC ChipsMemory

Specifications
SKU
1125860
Details

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1 Mbit / 2 Mbit / 4 Mbit x8 Multi-Purpose Flash
Parameter Description Value Unit
Device Type Flash Memory SST39SF010A-70-4I-NHE -
Memory Density Total Memory 1 Mbit (128K x 8) -
Voltage Supply (Vcc) Operating Voltage Range 2.7 to 3.6 V
Programming Voltage (Vpp) Programming Voltage 12.75 ± 0.25 V
Data Retention Data Retention Time 100 Years
Endurance Write/Erase Cycles 100,000 -
Access Time Typical Access Time 70 ns
Write Time Typical Page Program Time 1.5 ms
Erase Time Typical Sector Erase Time 10 ms
Package Type Package 44-Pin TSOP (Thin Small Outline Package) -
Operating Temperature Industrial Temperature Range -40 to +85 °C
Storage Temperature Storage Temperature Range -65 to +150 °C
Pin Configuration Number of Pins 44 -
Standby Current Standby Current (Vcc = 3.0V) 1 μA
Active Current Active Current (Vcc = 3.0V) 20 mA
Write Current Write Current (Vcc = 3.0V) 15 mA

Instructions for Use:

  1. Power Supply:

    • Ensure that the supply voltage (Vcc) is within the specified range of 2.7 to 3.6V.
    • The programming voltage (Vpp) should be set to 12.75 ± 0.25V when performing write or erase operations.
  2. Temperature Considerations:

    • Operate the device within the industrial temperature range of -40°C to +85°C.
    • Store the device within the storage temperature range of -65°C to +150°C to ensure long-term reliability.
  3. Pin Configuration:

    • Refer to the pin configuration diagram provided in the datasheet to correctly connect the device.
    • Pay special attention to the power, ground, and control pins (e.g., CE, OE, WE, etc.).
  4. Programming and Erasing:

    • Use the appropriate commands and sequences for programming and erasing operations as detailed in the datasheet.
    • Ensure that the device is not powered down during these operations to prevent data corruption.
  5. Data Retention and Endurance:

    • The device is designed to retain data for up to 100 years under normal operating conditions.
    • The device can withstand up to 100,000 write/erase cycles per sector.
  6. Current Consumption:

    • Monitor the current consumption during active and standby modes to ensure it remains within the specified limits.
    • Use low-power modes where applicable to minimize power consumption.
  7. Handling and Storage:

    • Handle the device with care to avoid static discharge, which can damage the internal circuitry.
    • Store the device in a dry, cool place to prevent moisture-related issues.

For more detailed information, refer to the official datasheet and application notes provided by the manufacturer.

(For reference only)

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