Details

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BUY AT29C040A-10TI https://www.utsource.net/itm/p/1126177.html
High Speed CMOS Logic Octal Positive-Edge-Triggered D-Type Flip-Flops with 3-State Outputs 20-SOIC -55 to 125

Below is the parameter table and instructions for the AT29C040A-10TI, a 512K x 8-bit CMOS Flash Memory.

Parameter Table

Parameter	Symbol	Min	Typ	Max	Unit	Conditions
Supply Voltage	VCC	2.7	-	3.6	V	-
Standby Current	ICC(STANDBY)	-	1	5	μA	VCC = 3.0V, TA = 25°C
Active Current	ICC(ACTIVE)	-	5	20	mA	VCC = 3.0V, TA = 25°C, fCLK = 10 MHz
Access Time	tAA	70	-	-	ns	VCC = 3.0V, TA = 25°C, fCLK = 10 MHz
Write Cycle Time	tWC	1	-	2	s	VCC = 3.0V, TA = 25°C
Sector Erase Time	tSE	1	-	2	s	VCC = 3.0V, TA = 25°C
Chip Erase Time	tCE	10	-	20	s	VCC = 3.0V, TA = 25°C
Data Retention	tRET	-	-	10	years	VCC = 3.0V, TA = 25°C
Operating Temperature	TA	-40	-	85	°C	-
Storage Temperature	TSTORAGE	-65	-	150	°C	-

Instructions

Pin Configuration

• V_CC: Power supply (2.7V to 3.6V)
• GND: Ground
• A0-A18: Address lines
• D0-D7: Data lines
• OE: Output Enable (active low)
• WE: Write Enable (active low)
• CE: Chip Enable (active low)
• WP: Write Protect (active low)
• RESET: Reset input (active low)

Basic Operations

1. Read Operation:

   • Set CE and OE low.
   • Apply the desired address to A0-A18.
   • The data at the specified address will appear on D0-D7 after the access time (t_AA).

2. Write Operation:

   • Set CE, WE, and OE low.
   • Apply the desired address to A0-A18.
   • Apply the data to be written to D0-D7.
   • Maintain WE low for the write cycle time (t_WC).
   • After the write cycle, set WE high to complete the write operation.

3. Sector Erase:

   • Set CE and WE low.
   • Apply the sector address to A0-A18.
   • Apply the erase command sequence.
   • Maintain WE low for the sector erase time (t_SE).
   • After the erase cycle, set WE high to complete the erase operation.

4. Chip Erase:

   • Set CE and WE low.
   • Apply the chip erase command sequence.
   • Maintain WE low for the chip erase time (t_CE).
   • After the erase cycle, set WE high to complete the erase operation.

5. Write Protect:

   • Set WP high to prevent any write or erase operations.
   • Set WP low to allow write and erase operations.

Command Sequence

• Write Enable Latch (WEL):
  • Write 0x06 to the status register.
• Sector Erase:
  • Write 0x20 to the status register.
  • Write 0xD0 to the status register.
  • Write 0x20 to the status register.
• Chip Erase:
  • Write 0x60 to the status register.
  • Write 0xD0 to the status register.
  • Write 0x60 to the status register.
• Read Status Register:
  • Write 0x70 to the status register.
  • Read the status register.

Notes

• Ensure that the power supply voltage (V_CC) is within the specified range.
• Avoid exceeding the maximum operating temperature to prevent damage to the device.
• Use appropriate decoupling capacitors near the power supply pins to reduce noise and improve stability.

This table and instructions should provide you with the necessary information to use the AT29C040A-10TI effectively.

(For reference only)