Details

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BUY M27C4001-12F6 https://www.utsource.net/itm/p/1330746.html
IC EPROM 4MBIT PARALLEL 32CDIP

Parameter	Description	Value
Device Type	EPROM (Erasable Programmable Read-Only Memory)
Manufacturer	ATMEL
Part Number	M27C4001-12F6
Memory Size	512 Kbit (64 K x 8)
Voltage - Supply	VCC	4.5V to 5.5V
Operating Temperature	Industrial (-40°C to +85°C)
Programming Voltage	VPP	12.5V ± 0.5V
Programming Time	Typical	3 ms per byte
Data Retention	Minimum	10 years
Endurance	Write/Erase Cycles	1,000,000
Package	DIP-28 (Dual In-Line Package)
Pin Configuration	- VCC: Pin 28 - VPP: Pin 1 - A0-A15: Address Lines - D0-D7: Data Lines - OE: Output Enable - CE: Chip Enable - WE: Write Enable

Instructions for Use

1. Power Supply:

   • Connect VCC (Pin 28) to the positive supply voltage (4.5V to 5.5V).
   • Connect GND (Pin 14) to ground.

2. Programming:

   • Apply the programming voltage (VPP = 12.5V ± 0.5V) to Pin 1.
   • Set the address lines (A0-A15) to the desired memory location.
   • Set the data lines (D0-D7) to the data to be written.
   • Assert the Write Enable (WE) signal to write the data to the specified address.
   • The typical programming time is 3 ms per byte.

3. Reading:

   • Set the address lines (A0-A15) to the desired memory location.
   • Assert the Chip Enable (CE) and Output Enable (OE) signals to read the data from the specified address.
   • The data will be available on the data lines (D0-D7).

4. Erase:

   • Expose the device to UV light for at least 15 minutes to erase the contents of the memory.

5. Handling:

   • Handle the device with care to avoid static discharge.
   • Store the device in a protective bag or container to prevent exposure to UV light when not in use.

Notes

• Ensure that the programming and erase operations are performed using appropriate equipment and procedures to avoid damage to the device.
• Always refer to the datasheet for detailed specifications and application notes.

(For reference only)