Details

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BUY IR2011STRPBF https://www.utsource.net/itm/p/1352931.html
High and Low Side Driver in a 8-Lead PDIP package; A IR2011 packaged in a Lead-Free 8-Lead SOIC shipped on Tape and Reel

Parameter	Symbol	Min	Typical	Max	Unit
Supply Voltage	Vcc	10	-	20	V
Gate Drive Output Voltage	Vgs	10	-	15	V
Gate Drive Output Current	Igs	-	4	-	A
Operating Temperature	Tj	-40	-	150	°C
Storage Temperature	Tstg	-65	-	150	°C
Maximum Junction Temperature	Tj(max)	-	-	150	°C
Input Capacitance	Cin	-	100	-	pF
Output Capacitance	Cout	-	200	-	pF
Propagation Delay Time	tpd	-	80	-	ns
Rise Time	tr	-	30	-	ns
Fall Time	tf	-	20	-	ns

Instructions for Use:

1. Power Supply:

   • Ensure the supply voltage (Vcc) is within the range of 10V to 20V.
   • The gate drive output voltage (Vgs) should be between 10V and 15V.

2. Gate Drive:

   • The gate drive output current (Igs) can reach up to 4A.
   • Ensure that the gate drive circuitry can handle this current.

3. Temperature Considerations:

   • The operating temperature (Tj) should not exceed 150°C.
   • Store the device in an environment where the temperature ranges from -65°C to 150°C.

4. Capacitance:

   • The input capacitance (Cin) is typically around 100pF.
   • The output capacitance (Cout) is typically around 200pF.

5. Timing Parameters:

   • The propagation delay time (tpd) is typically 80ns.
   • The rise time (tr) is typically 30ns.
   • The fall time (tf) is typically 20ns.

6. Mounting and Handling:

   • Handle the device with care to avoid damage to the pins and internal components.
   • Follow standard ESD (Electrostatic Discharge) precautions to prevent damage.

7. Application Notes:

   • Refer to the datasheet for detailed application notes and circuit diagrams.
   • Ensure proper heat dissipation if the device is expected to operate at high temperatures or under high load conditions.

8. Compliance:

   • Ensure that the device complies with all relevant safety and regulatory standards for your specific application.

(For reference only)