Details

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BUY FZ400R12KE3 https://www.utsource.net/itm/p/1366510.html
IGBT Modules up to 1200V Single; Package: AG-62MM-2; IC max: 400.0 A; VCEsat typ: 1.7 V; Configuration: Single Modules; Technology: IGBT3; Housing: 62 mm;

Parameter	Symbol	Min	Typ	Max	Unit	Description
Rated Voltage (VDC)	VD	-	1200	-	V	Maximum repetitive peak off-state voltage
Rated Current (IT(RMS))	IT(RMS)	-	400	-	A	RMS current in the on-state
Forward Voltage Drop	VF	-	1.8	-	V	Forward voltage at specified current
Reverse Recovery Time	trr	-	90	-	ns	Reverse recovery time
Junction Temperature	Tj	-25	-	150	°C	Operating junction temperature range
Storage Temperature	Tstg	-55	-	150	°C	Storage temperature range
Gate Charge	Qg	-	36	-	nC	Total gate charge

Instructions for FZ400R12KE3:

1. Installation:

   • Ensure that the device is mounted on a suitable heat sink to maintain the junction temperature within operational limits.
   • Use appropriate mounting hardware and thermal interface materials to ensure good thermal conductivity.

2. Handling:

   • Handle with care to avoid damage to the pins or body of the device.
   • Follow ESD (Electrostatic Discharge) precautions to prevent damage from static electricity.

3. Operation:

   • Do not exceed the maximum ratings listed in the parameter table.
   • Ensure the gate drive circuitry provides sufficient drive strength to switch the device efficiently.
   • Monitor the device temperature during operation to prevent overheating.

4. Storage:

   • Store in a dry, cool place away from direct sunlight and sources of heat.
   • Keep in original packaging until ready to use to protect against physical damage and ESD.

5. Testing:

   • Perform initial testing under controlled conditions to validate performance parameters.
   • Regularly inspect the device for signs of wear or damage during maintenance checks.

(For reference only)