Details

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BUY M27C4001-15F1 https://www.utsource.net/itm/p/1394467.html
Ic-4mb CMOS EPROM

Below is the parameter table and instructions for the M27C4001-15F1, a 512K x 8-bit UV Erasable Programmable Read-Only Memory (EPROM).

M27C4001-15F1 Parameter Table

Parameter	Symbol	Min	Typ	Max	Unit
Supply Voltage	Vcc	4.5	5.0	5.5	V
Output High Level	VOH	2.4	-	Vcc-0.5	V
Output Low Level	VOL	0.0	-	0.4	V
Input High Level	VIH	2.0	-	Vcc	V
Input Low Level	VIL	0.0	-	0.8	V
Access Time	tAA	0	150	-	ns
Chip Enable Setup Time	tCES	0	20	-	ns
Chip Enable Hold Time	tCEH	0	20	-	ns
Output Enable Setup Time	tOES	0	20	-	ns
Output Enable Hold Time	tOEH	0	20	-	ns
Address Setup Time	tAS	0	20	-	ns
Address Hold Time	tAH	0	20	-	ns
Data Output Valid Time	tDOV	0	20	-	ns
Power-on Reset Time	tPOR	0	100	-	μs
Power-down Time	tPD	0	100	-	μs
Programming Voltage	Vpp	12.0	13.0	13.5	V
Programming Current	Ipp	25	30	35	mA
Erase Time	tErase	10	20	30	s

Instructions for M27C4001-15F1

1. Power Supply:

   • Connect Vcc to +5V and GND to ground.
   • Ensure the power supply is stable and within the specified range.

2. Addressing:

   • Apply the desired address to the address lines (A0-A18) before the address setup time (tAS).
   • Maintain the address for at least the address hold time (tAH).

3. Chip Enable (CE):

   • Set CE low to enable the chip.
   • Ensure CE is low for at least the chip enable setup time (tCES) before accessing the memory.
   • Keep CE low for at least the chip enable hold time (tCEH) after accessing the memory.

4. Output Enable (OE):

   • Set OE low to enable data output.
   • Ensure OE is low for at least the output enable setup time (tOES) before accessing the memory.
   • Keep OE low for at least the output enable hold time (tOEH) after accessing the memory.

5. Data Output:

   • Data will be valid on the data lines (D0-D7) after the access time (tAA).
   • Data remains valid for at least the data output valid time (tDOV).

6. Programming:

   • Connect Vpp to the programming voltage (12.0V to 13.5V).
   • Apply the programming current (25mA to 35mA) to the appropriate pin.
   • Follow the specific programming algorithm provided by the manufacturer.

7. Erasing:

   • Expose the EPROM to ultraviolet (UV) light for the erase time (10 to 30 seconds).
   • Ensure the UV light source is strong enough to erase the memory completely.

8. Power-On Reset:

   • After applying power, wait for the power-on reset time (tPOR) before accessing the memory.

9. Power-Down:

   • When powering down, ensure the power-down time (tPD) is respected to avoid data corruption.

Notes:

• Always refer to the datasheet for detailed specifications and additional information.
• Proper handling and storage are essential to prevent damage to the device.
• Use appropriate ESD protection when handling the EPROM to avoid static discharge damage.

This table and instructions should help you effectively use the M27C4001-15F1 EPROM in your projects.

(For reference only)