Details

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64K 8K x 8 CMOS E2PROM with Page Write and Software Data Protection

Parameter	Symbol	Min	Typical	Max	Unit	Notes
Supply Voltage	VCC	4.5	-	5.5	V	Operating voltage range
Standby Current	ICC(standby)	-	10	-	μA	With /OE and /WE high
Active Current (Read)	ICC(read)	-	30	-	mA	At VCC = 5V, fCLK = 50 MHz
Active Current (Write)	ICC(write)	-	40	-	mA	At VCC = 5V, fCLK = 50 MHz
Access Time	tAA	-	70	150	ns	Access time from address valid to data valid
Write Cycle Time	tWC	-	550	700	μs	Time required for a complete write cycle
Address Latch Time	tALH	-	20	40	ns	Time from /OE low to address valid
Output Hold Time	tOHZ	-	10	20	ns	Time data is held after /OE goes high
Output Disable Time	tDS	-	10	20	ns	Time from /OE high to output disabled
Write Enable Pulse Width	tWP	-	100	200	ns	Minimum pulse width for /WE
Write Recovery Time	tWR	-	10	20	ns	Time from /WE high to next operation
Data Setup Time	tDSU	-	10	20	ns	Time data must be stable before /WE low
Data Hold Time	tDH	-	0	10	ns	Time data must be stable after /WE low
Address Setup Time	tAS	-	10	20	ns	Time address must be stable before /OE or /WE low
Address Hold Time	tAH	-	0	10	ns	Time address must be stable after /OE or /WE low
Power-down Time	tPD	-	0	10	μs	Time to enter power-down mode
Power-up Time	tPU	-	0	10	μs	Time to exit power-down mode

Instructions:

1. Power Supply:

   • Ensure the supply voltage (V_CC) is within the specified range (4.5V to 5.5V).

2. Addressing:

   • Provide the correct address lines (A0-A12) to select the desired memory location.
   • Address setup time (t_AS) and hold time (t_AH) must be respected to ensure reliable data access.

3. Data Read:

   • Set the output enable (/OE) low to read data from the selected address.
   • Data will be available on the data lines (D0-D7) after the access time (t_AA).
   • Ensure the output hold time (t_OHZ) is respected before disabling the output by setting /OE high.

4. Data Write:

   • Set the write enable (/WE) low to initiate a write cycle.
   • Ensure the data setup time (t_DSU) and data hold time (t_DH) are respected.
   • The write cycle time (t_WC) must be observed to ensure the data is written correctly.
   • After writing, ensure the write recovery time (t_WR) is respected before initiating another operation.

5. Power Management:

   • To enter power-down mode, set both /OE and /WE high.
   • To exit power-down mode, bring either /OE or /WE low.
   • Observe the power-down time (t_PD) and power-up time (t_PU) to ensure proper operation.

6. Current Consumption:

   • Monitor the active current (I_CC(read/write)) during read and write operations to avoid exceeding the maximum ratings.
   • Standby current (I_CC(standby)) should be considered when the device is not in use.

7. Timing Diagrams:

   • Refer to the timing diagrams provided in the datasheet for more detailed information on signal interactions and timing requirements.

(For reference only)