Details

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BUY IDT71V124SA10Y https://www.utsource.net/itm/p/1408649.html
3.3V CMOS Static RAM 1 Meg 128K x 8-Bit Center Power & Ground Pinout

Below is the parameter table and instructions for the IDT71V124SA10Y, a 128K x 8-bit (1 Mbit) Serial NVSRAM from Integrated Device Technology (IDT).

Parameter Table

Parameter	Symbol	Min	Typ	Max	Unit	Conditions
Supply Voltage	VCC	1.7	1.8	3.6	V
Standby Current	ICC	-	1.0	5.0	μA	VCC = 1.8V, f = 0 Hz
Active Current	ICC	-	10	20	mA	VCC = 1.8V, f = 1 MHz
Data Retention Time	tRET	10	-	20	years	VCC = 1.8V, 25°C
Write Cycle Time	tWC	0.5	-	1.0	ms	VCC = 1.8V, 25°C
Read Cycle Time	tRC	0.1	-	0.2	μs	VCC = 1.8V, 25°C
Serial Clock Frequency	fSCL	-	10	50	MHz	VCC = 1.8V, 25°C
Serial Data Input Setup Time	tSU-DI	5	-	10	ns	VCC = 1.8V, 25°C
Serial Data Input Hold Time	tHOLD-DI	5	-	10	ns	VCC = 1.8V, 25°C
Serial Data Output Delay	tDO	0	5	10	ns	VCC = 1.8V, 25°C

Instructions

1. Power Supply:

   • Ensure that the supply voltage (VCC) is within the specified range of 1.7V to 3.6V.
   • Use a stable power supply to avoid voltage fluctuations that could affect data integrity.

2. Serial Communication:

   • The device supports SPI (Serial Peripheral Interface) communication.
   • Set the serial clock frequency (fSCL) to a value between 10 MHz and 50 MHz for optimal performance.
   • Ensure that the data input setup time (tSU-DI) and hold time (tHOLD-DI) are met to prevent data corruption.

3. Data Retention:

   • The device retains data for up to 20 years at 25°C when powered by a stable 1.8V supply.
   • For extended data retention, avoid exposing the device to extreme temperatures or high humidity.

4. Write and Read Operations:

   • The write cycle time (tWC) is 0.5 to 1.0 ms, so ensure that the write operation is completed before initiating another write or read cycle.
   • The read cycle time (tRC) is 0.1 to 0.2 μs, allowing for fast data retrieval.

5. Current Consumption:

   • The standby current (ICC) is typically 1.0 μA, making the device suitable for low-power applications.
   • The active current (ICC) is typically 10 mA, which should be considered in power budget calculations.

6. Environmental Conditions:

   • Store and operate the device in a clean, dry environment to prevent damage from contaminants.
   • Avoid exposing the device to temperatures outside the operating range of -40°C to 85°C.

7. Handling:

   • Handle the device with care to avoid static discharge, which can damage the internal circuits.
   • Use appropriate ESD (Electrostatic Discharge) protection measures during handling and installation.

By following these parameters and instructions, you can ensure reliable operation and long-term performance of the IDT71V124SA10Y NVSRAM.

(For reference only)