Details
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150NS, PDIP, IND TEMP, GREENEEPROM
Parameter | Description | Value |
---|---|---|
Device | AT28C64B-15PU | |
Type | 64K x 8 CMOS UV-Erasable Electrically Programmable Read-Only Memory (EEPROM) | |
Package | 28-Pin Plastic DIP (PDIP) | |
Operating Voltage (Vcc) | Range for Vcc | 2.7V to 5.5V |
Standby Current (ISB) | Maximum at Vcc = 5.5V, TA = 25°C | 10 μA |
Active Current (IACT) | Maximum at Vcc = 5.5V, TA = 25°C, during read operation | 30 mA |
Write Cycle Time (tWC) | Maximum time to complete a write cycle | 9 ms |
Data Retention | Minimum data retention time at TA = 25°C | 10 years |
Programming Voltage (Vpp) | Programming voltage for write operations | Vcc + 12.5V (max) |
Temperature Range (TA) | Operating temperature range | -40°C to +85°C |
Endurance | Number of write/erase cycles | 100,000 cycles |
Organization | Memory organization | 64K x 8 bits |
Access Time (tAA) | Maximum access time for read operations | 150 ns |
Output Drive Capability | Output drive capability per pin | ±10 mA |
Instructions for Use:
Power Supply:
- Connect Vcc to the positive power supply (2.7V to 5.5V).
- Connect GND to the ground.
Programming:
- Apply Vpp (Vcc + 12.5V max) to the programming pin (pin 28) during write operations.
- Use the appropriate programming algorithm to write data to the memory. Each write cycle takes a maximum of 9 ms.
Reading Data:
- Apply the address to the address lines (A0-A15).
- Assert the chip enable (CE#) and output enable (OE#) pins low to read data from the memory.
- The data will be available on the data lines (D0-D7) after the access time (150 ns).
Erasing:
- Expose the device to UV light for at least 20 minutes to erase the entire memory array.
Handling:
- Handle the device with care to avoid static damage.
- Store the device in a protective bag when not in use to prevent exposure to moisture.
Storage:
- Store the device in a dry environment to ensure long-term reliability.
Temperature Considerations:
- Ensure that the operating temperature remains within the specified range (-40°C to +85°C) to maintain optimal performance and data integrity.
Endurance and Data Retention:
- The device is rated for 100,000 write/erase cycles and can retain data for up to 10 years at room temperature.
For detailed specifications and additional information, refer to the datasheet provided by the manufacturer.
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