Details

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BUY IDT49FCT805CTSO https://www.utsource.net/itm/p/1530326.html
FAST CMOS BUFFER/CLOCK DRIVER

Parameter	Description	Value	Unit
Part Number	Component Identifier	IDT49FCT805CTSO	-
Type	Device Type	SRAM (Static Random Access Memory)	-
Capacity	Total Memory Capacity	512 K x 8 bits	-
Voltage Supply (Vcc)	Operating Voltage Range	4.5 to 5.5	V
Current (Icc)	Active Current	60	mA
Standby Current (Icc)	Standby Current	5	μA
Access Time (taa)	Access Time	70	ns
Cycle Time (tcyc)	Cycle Time	70	ns
Data Retention Time	Data Retention at 85°C	10	years
Operating Temperature (Topr)	Operating Temperature Range	-40 to +85	°C
Storage Temperature (Tstg)	Storage Temperature Range	-65 to +150	°C
Package	Package Type	TSSOP-32 (Thin Small Outline Package)	-
Pin Count	Number of Pins	32	-
RoHS Compliance	Restriction of Hazardous Substances	Compliant	-

Instructions for Use

1. Power Supply:

   • Ensure that the supply voltage (Vcc) is within the specified range of 4.5V to 5.5V.
   • Connect the ground pin (GND) to a stable ground reference.

2. Signal Levels:

   • All input signals should be TTL compatible.
   • Output signals are also TTL compatible.

3. Addressing:

   • Use the address lines (A0-A18) to select the desired memory location.
   • The chip supports up to 512 K addresses.

4. Data Input/Output:

   • Data is read from or written to the memory using the data lines (D0-D7).
   • Ensure that the data lines are properly connected to the system bus.

5. Control Signals:

   • Chip Select (CS#): Low to enable the device.
   • Write Enable (WE#): Low to write data to the selected address.
   • Output Enable (OE#): Low to read data from the selected address.
   • Output Disable (OE#): High to place the outputs in a high-impedance state.

6. Timing:

   • Ensure that all timing parameters, such as access time and cycle time, are met to avoid data corruption.
   • Refer to the timing diagram provided in the datasheet for detailed timing requirements.

7. Handling:

   • Handle the device with care to avoid static discharge.
   • Store the device in a dry environment to prevent moisture damage.

8. Testing:

   • Perform initial testing under controlled conditions to verify proper operation.
   • Use a known good test pattern to validate memory functionality.

9. Environmental Considerations:

   • Operate the device within the specified temperature ranges to ensure reliable performance.
   • Store the device in a temperature-controlled environment to prevent damage.

10. Compliance:

    • Ensure that the device complies with all relevant RoHS regulations and standards.

For more detailed information, refer to the full datasheet provided by the manufacturer.

(For reference only)