Details
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Below is the parameter table and instructions for the MM74C89N, a 16-bit static RAM (Random Access Memory) IC.
MM74C89N Parameter Table
Parameter | Symbol | Min | Typ | Max | Unit | Conditions |
---|---|---|---|---|---|---|
Supply Voltage | VCC | 4.5 | 5.0 | 5.5 | V | |
Standby Current | ICC(standby) | - | 20 | 40 | μA | VCC = 5V, all inputs high |
Active Current | ICC(active) | - | 200 | 300 | mA | VCC = 5V, all outputs low |
Output High Level | VOH | 2.4 | 3.5 | - | V | IOL = -0.4mA, VCC = 5V |
Output Low Level | VOL | - | 0.4 | 0.5 | V | IOL = 8mA, VCC = 5V |
Input High Level | VIH | 2.0 | - | - | V | VCC = 5V |
Input Low Level | VIL | - | - | 0.8 | V | VCC = 5V |
Address Setup Time | tAS | 20 | - | - | ns | Before rising edge of WE |
Address Hold Time | tAH | 5 | - | - | ns | After rising edge of WE |
Data Setup Time | tDS | 20 | - | - | ns | Before rising edge of WE |
Data Hold Time | tDH | 5 | - | - | ns | After rising edge of WE |
Write Enable Pulse Width | tWP | 20 | - | - | ns | Minimum pulse width |
Read Access Time | tAA | 150 | - | - | ns | From rising edge of OE to valid data output |
Output Enable to Output Delay | tOZ | 10 | - | - | ns | From falling edge of OE to valid data output |
Instructions for Using MM74C89N
Power Supply:
- Connect VCC to +5V and GND to ground.
- Ensure a stable power supply to avoid data corruption.
Addressing:
- The MM74C89N has 16 address lines (A0-A15) to select one of the 65,536 memory locations.
- Apply the desired address to these lines before performing read or write operations.
Data Input/Output:
- The data bus consists of 8 lines (D0-D7).
- During a write operation, data is written to the selected memory location via these lines.
- During a read operation, data from the selected memory location appears on these lines.
Control Signals:
- Write Enable (WE): When low, data is written to the memory location specified by the address lines.
- Output Enable (OE): When low, the data from the selected memory location is placed on the data bus.
- Chip Enable (CE): When low, the chip is active and can perform read/write operations. When high, the chip is in a high-impedance state.
Timing Considerations:
- Ensure that the address and data setup times are met before the rising edge of the WE signal.
- The address and data hold times must be maintained after the rising edge of the WE signal.
- The read access time must be considered to ensure that the data is valid on the output lines after the OE signal goes low.
Power-Up and Power-Down:
- During power-up and power-down, avoid accessing the memory to prevent data corruption.
- Use appropriate pull-up or pull-down resistors on control lines to ensure they are in a known state during power transitions.
Handling:
- Handle the IC with care to avoid static damage.
- Store and transport the IC in anti-static packaging.
By following these parameters and instructions, you can effectively use the MM74C89N in your electronic projects.
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