Details

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BUY MG100Q2YS11 https://www.utsource.net/itm/p/1570997.html
Filter - STD 140 High-Selectivity

Parameter	Description
Part Number	MG100Q2YS11
Type	MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor)
Polarity	N-Channel
VDS (Drain-Source Voltage)	100 V
RDS(on) (On-State Resistance)	2.5 mΩ @ VGS = 10V, ID = 40A
ID (Continuous Drain Current)	40 A @ Tc = 25°C
PD (Total Power Dissipation)	26 W @ TC = 25°C
VGS(th) (Gate Threshold Voltage)	2.0 to 4.0 V @ ID = 1 mA
Package Type	TO-220AB
Operating Temperature Range	-55°C to +150°C
Storage Temperature Range	-55°C to +150°C

Instructions for Use:

1. Handling Precautions: The MG100Q2YS11 is sensitive to electrostatic discharge (ESD). Handle with care and use proper ESD protection equipment.
2. Mounting: Ensure the device is securely mounted on a heat sink if operating near maximum power dissipation limits. Proper thermal management is crucial for reliable operation.
3. Biasing: Apply gate voltage carefully within specified limits to avoid damage or malfunction. Ensure VGS does not exceed the absolute maximum rating.
4. Testing: During testing and initial setup, monitor temperature and current to ensure they remain within safe operating areas.
5. Circuit Design: Incorporate appropriate snubber circuits or protective diodes as necessary to protect against transient voltages and currents, especially in switching applications.
6. Compliance: Verify that the application complies with all relevant safety and regulatory standards.

(For reference only)