Details

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BUY M27C64A-20F6 https://www.utsource.net/itm/p/1808395.html
64 Kbit (8Kb x8) UV EPROM and OTP EPROM

Parameter	Description	Value
Part Number	Device Part Number	M27C64A-20F6
Type	Device Type	UV-Erasable PROM
Capacity	Memory Capacity	8K x 8
Voltage (Vcc)	Operating Voltage	5.0 V ± 0.25 V
Current (Icc)	Active Current	10 mA (max)
Programming Voltage (Vpp)	Programming Voltage	12.5 V ± 0.5 V
Programming Time	Typical Programming Time	1 ms
Access Time	Access Time	200 ns (max)
Package	Package Type	DIP-28
Operating Temperature	Operating Temperature Range	-40°C to +85°C
Storage Temperature	Storage Temperature Range	-65°C to +150°C
Endurance	Write/Erase Cycles	10,000
Data Retention	Data Retention at 25°C	10 years
Pin Configuration	Pin 1 (A0)	Address Input
	Pin 2 (A1)	Address Input
	...	...
	Pin 21 (Vpp)	Programming Voltage Input
	Pin 22 (Vcc)	Power Supply
	Pin 23 (GND)	Ground
	Pin 24 (OE)	Output Enable
	Pin 25 (CE)	Chip Enable
	Pin 26 (D0)	Data Output
	...	...
	Pin 28 (A12)	Address Input

Instructions for Use:

1. Power Supply:

   • Connect Vcc (Pin 22) to +5.0 V ± 0.25 V.
   • Connect GND (Pin 23) to ground.

2. Programming:

   • Apply Vpp (Pin 21) to 12.5 V ± 0.5 V during programming.
   • Set the address lines (A0-A12) to the desired memory location.
   • Set the data line (D0-D7) to the data to be written.
   • Apply a programming pulse to the CE (Chip Enable) pin.
   • The typical programming time is 1 ms.

3. Reading Data:

   • Set the address lines (A0-A12) to the desired memory location.
   • Set OE (Output Enable) to low to enable data output.
   • Read the data from the data lines (D0-D7).

4. Erase:

   • Expose the device to ultraviolet light for at least 20 minutes to erase the contents of the PROM.

5. Handling:

   • Handle the device with care to avoid static damage.
   • Store the device in a dry, cool place when not in use.

6. Temperature Considerations:

   • Ensure the operating temperature is within -40°C to +85°C.
   • Store the device within -65°C to +150°C.

7. Endurance and Data Retention:

   • The device can withstand up to 10,000 write/erase cycles.
   • Data retention is guaranteed for at least 10 years at 25°C.

(For reference only)