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BUY FF200R12KE3 https://www.utsource.net/itm/p/1832313.html
IGBT-Module
Description: The FF200R12KE3 is an insulated-gate bipolar transistor (IGBT) module from EUPEC. It is a three-phase, full-bridge module with a maximum collector-emitter voltage of 1200V and a maximum collector current of 200A. Features: High blocking voltage of 1200V Low on-state voltage drop of 2.2V Low switching losses High current capability of 200A High surge current capability High switching frequency Low EMI Application: The FF200R12KE3 IGBT module is suitable for a wide range of applications, including motor drives, UPS, welding machines, power supplies, and solar inverters. (For reference only)