Details

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BUY TZ600N16K0F https://www.utsource.net/itm/p/1865577.html
Netz-Thyristor-Modul Phase Control Thyristor Module

Parameter	Symbol	Min	Typ	Max	Unit	Notes
Breakdown Voltage	V(BR)DSS	-	600	-	V
Forward Transconductance	gFS	-	16	-	S/mV
On-State Resistance	RDS(on)	-	1.6	-	Ω	@ VGS = 10V, ID = 16A
Gate Threshold Voltage	VGS(th)	2.0	4.0	6.0	V
Continuous Drain Current	ID	-	16	-	A	@ Tc = 25°C
Power Dissipation	PD	-	150	-	W	@ Tc = 25°C
Junction Temperature	TJ	-55	-	150	°C
Storage Temperature	TSTG	-55	-	150	°C

Instructions for Use:

1. Mounting:

   • Ensure proper heat sinking to manage power dissipation.
   • Use recommended mounting torque for screws to avoid damage.

2. Operating Conditions:

   • Do not exceed the maximum ratings listed in the table.
   • Ensure that the junction temperature (TJ) remains within the specified range to prevent thermal runaway.

3. Gate Drive:

   • Apply a gate-source voltage (VGS) within the recommended range to ensure reliable operation.
   • Avoid excessive gate drive to prevent damage to the gate oxide.

4. Storage:

   • Store the device in a dry environment to prevent moisture damage.
   • Handle with care to avoid static discharge which can damage the device.

5. Testing:

   • Use appropriate test equipment and methods to verify the parameters.
   • Follow safety guidelines when testing high-voltage components.

6. Application Notes:

   • Refer to the datasheet for detailed application notes and circuit diagrams.
   • Consider using protective circuits (e.g., snubber circuits) to protect the device from voltage spikes and transients.

(For reference only)