M48Z129V-85PM1

M48Z129V-85PM1

Category: IC Chips

Specifications
SKU
1866851
Details

BUY M48Z129V-85PM1 https://www.utsource.net/itm/p/1866851.html
3.3V/5V 1 Mbit 128Kb x8 ZEROPOWER SRAM
Parameter Symbol Min Typical Max Unit
Supply Voltage Vcc 2.7 - 5.5 V
Operating Temperature Temp -40 - 85 °C
Standby Current Icc - 0.1 - μA
Active Current Icc - 3.5 - mA
Access Time tacc 0 45 - ns
Cycle Time tcycle - 60 - ns
Data Retention Time trr - 10 - years
Write Time (Byte) twb - 5 - μs
Write Time (Page) twp - 2 - ms
Erase Time (Sector) tes - 10 - ms
Erase Time (Chip) tec - 50 - ms
Endurance (Write/Erase) N - 100,000 - cycles
Data Integrity - - 256 - bits/sector

Instructions for Use

  1. Power Supply:

    • Ensure the supply voltage (Vcc) is within the range of 2.7V to 5.5V.
    • Connect the Vcc pin to the positive power supply and GND to the ground.
  2. Temperature Range:

    • The device operates reliably between -40°C and 85°C.
  3. Current Consumption:

    • In standby mode, the current consumption is typically 0.1 μA.
    • In active mode, the current consumption is typically 3.5 mA.
  4. Access and Cycle Times:

    • The access time (tacc) is typically 45 ns.
    • The cycle time (tcycle) is typically 60 ns.
  5. Data Retention:

    • Data retention is guaranteed for up to 10 years.
  6. Write Operations:

    • Writing a byte takes approximately 5 μs.
    • Writing a page takes approximately 2 ms.
  7. Erase Operations:

    • Erasing a sector takes approximately 10 ms.
    • Erasing the entire chip takes approximately 50 ms.
  8. Endurance:

    • The device can withstand up to 100,000 write/erase cycles.
  9. Data Integrity:

    • Each sector has 256 bits dedicated to data integrity checks.
  10. Handling:

    • Handle the device with care to avoid static damage.
    • Follow standard ESD (Electrostatic Discharge) precautions.
  11. Storage:

    • Store the device in a dry, cool place when not in use.
  12. Testing:

    • Perform initial testing under controlled conditions to ensure proper functionality.
  13. Documentation:

    • Refer to the datasheet for detailed timing diagrams and application notes.
(For reference only)

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