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BUY BSM50GD120DN2-B10 https://www.utsource.net/itm/p/1869490.html
IGBT Power Module (Power module 3-phase full-bridge Including fast free-wheel diodes)
Description: The BSM50GD120DN2-B10 is an insulated gate bipolar transistor (IGBT) module from EUPEC. It is a 1200V, 50A device with a maximum junction temperature of 150°C. Features: 1200V blocking voltage 50A continuous current Low on-state voltage drop Low switching losses High surge capability High short circuit capability Low thermal resistance Application: The BSM50GD120DN2-B10 is suitable for use in a variety of applications such as motor control, power conversion, UPS, solar inverters, and welding. (For reference only)