Details

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BUY MG300Q2YS43 https://www.utsource.net/itm/p/1872908.html
N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)

Parameter	Description	Value
Part Number	Unique identifier for the component	MG300Q2YS43
Type	Type of electronic component	MOSFET
Technology	Manufacturing technology	Silicon
Polarity	Polarity of the MOSFET	N-Channel
VDS (Max)	Maximum Drain-to-Source Voltage	300 V
VGS (Max)	Maximum Gate-to-Source Voltage	±20 V
ID (Max)	Maximum Drain Current	2.0 A
RDS(on)	On-State Resistance at VGS = 10 V	2.5 Ω
Power Dissipation	Maximum Power Dissipation	60 W
Operating Temperature	Operating Temperature Range	-55°C to +150°C
Package	Type of package	TO-220
Mounting Type	Method of mounting	Through-Hole

Instructions:

1. Handling and Storage:

   • Store in a dry, cool place to prevent moisture damage.
   • Handle with care to avoid damaging the leads and the body of the MOSFET.

2. Installation:

   • Ensure that the correct polarity is observed during installation.
   • Use a heatsink if operating at high power levels to manage heat dissipation effectively.
   • Soldering temperature should not exceed 260°C and should be completed within 10 seconds to avoid thermal damage.

3. Testing:

   • Use a multimeter or a dedicated MOSFET tester to check the continuity between the drain and source terminals when the gate is biased.
   • Ensure that the gate is properly grounded when not in use to prevent damage from static electricity.

4. Operation:

   • Do not exceed the maximum ratings for voltage, current, and power dissipation.
   • Operate within the specified temperature range to ensure reliable performance.
   • Use appropriate gate drive circuits to ensure proper switching and minimize switching losses.

(For reference only)