AS15-H1G

AS15-H1G

Category: IC ChipsDriver Ics

Specifications
Details

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Parameter Description
Part Number AS15-H1G
Type High-Speed MOSFET
Configuration N-Channel
Package TO-220
Drain Source Voltage 100V
Continuous Drain Current 16A (at 25°C), 8A (at 70°C)
Power Dissipation 100W
Gate Charge 40nC
Switching Frequency Optimized for frequencies up to 500kHz
RDS(on) 0.06Ω (at VGS=10V)
Operating Temperature -55°C to +150°C
Storage Temperature -65°C to +150°C

Instructions:

  1. Handling: Use appropriate anti-static precautions when handling the AS15-H1G to avoid damage from electrostatic discharge.
  2. Mounting: Ensure proper heat sinking for applications involving continuous high current or power dissipation to maintain device temperature within operational limits.
  3. Soldering: Solder within the temperature range of 260°C for no more than 10 seconds per joint to prevent thermal damage.
  4. Gate Drive: Ensure gate drive voltage is within specified limits to avoid damaging the gate oxide layer.
  5. Storage: Store in a dry, cool place away from direct sunlight and sources of heat.
  6. Application: Suitable for high-frequency switching applications such as DC-DC converters, motor control, and power supplies.
(For reference only)

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