Details
BUY AS15-H1G https://www.utsource.net/itm/p/1914473.html
| Parameter | Description |
|---|---|
| Part Number | AS15-H1G |
| Type | High-Speed MOSFET |
| Configuration | N-Channel |
| Package | TO-220 |
| Drain Source Voltage | 100V |
| Continuous Drain Current | 16A (at 25°C), 8A (at 70°C) |
| Power Dissipation | 100W |
| Gate Charge | 40nC |
| Switching Frequency | Optimized for frequencies up to 500kHz |
| RDS(on) | 0.06Ω (at VGS=10V) |
| Operating Temperature | -55°C to +150°C |
| Storage Temperature | -65°C to +150°C |
Instructions:
- Handling: Use appropriate anti-static precautions when handling the AS15-H1G to avoid damage from electrostatic discharge.
- Mounting: Ensure proper heat sinking for applications involving continuous high current or power dissipation to maintain device temperature within operational limits.
- Soldering: Solder within the temperature range of 260°C for no more than 10 seconds per joint to prevent thermal damage.
- Gate Drive: Ensure gate drive voltage is within specified limits to avoid damaging the gate oxide layer.
- Storage: Store in a dry, cool place away from direct sunlight and sources of heat.
- Application: Suitable for high-frequency switching applications such as DC-DC converters, motor control, and power supplies.
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