Details

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BUY TD162N14KOF https://www.utsource.net/itm/p/1918875.html

Parameter	Symbol	Conditions	Min	Typ	Max	Unit
Breakdown Voltage	V(BR)DSS		-	650	-	V
Drain-source On-Resistance	RDS(on)	VGS = 10V, ID = 2A	-	140	-	mΩ
Gate Threshold Voltage	VGS(th)	ID = 250μA	1.0	2.0	3.0	V
Continuous Drain Current	ID	TC = 25°C	-	2.0	-	A
Total Power Dissipation	PD	TC = 25°C	-	270	-	mW
Junction Temperature	Tj		-	150	-	°C
Storage Temperature Range	Tstg		-55	-	150	°C

Instructions for TD162N14KOF:

1. Handling Precautions:

   • Use appropriate ESD protection when handling the device to prevent damage.
   • Avoid exposing the device to high temperatures or humidity.

2. Mounting and Assembly:

   • Ensure that the mounting surfaces are clean and free from contaminants.
   • Follow recommended soldering profiles to avoid thermal stress on the device.

3. Operating Conditions:

   • Operate within specified voltage and current limits to ensure reliable performance.
   • Maintain junction temperature within the specified range to prevent overheating.

4. Storage:

   • Store in a dry, cool environment within the specified storage temperature range.
   • Handle with care to prevent mechanical damage.

5. Electrical Connections:

   • Verify correct polarity connections to avoid reverse bias conditions that can damage the device.
   • Ensure gate drive signals do not exceed the maximum gate-source voltage ratings.

6. Testing:

   • Perform initial testing under controlled conditions to validate proper operation.
   • Regularly inspect for signs of wear or damage during prolonged use.

(For reference only)