Details

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BUY MG50G2CH1 https://www.utsource.net/itm/p/2148297.html

Parameter	Description	Value	Unit
Part Number	Full part number	MG50G2CH1
Type	Component type	MOSFET
Package	Package type	TO-220
Drain Source Voltage	Maximum drain-source voltage	50	V
Continuous Drain Current	Continuous drain current at 25°C	2	A
Pulse Drain Current	Peak pulse drain current	8	A
Gate Source Voltage	Maximum gate-source voltage	±20	V
Power Dissipation	Maximum power dissipation	62.5	W
Junction Temperature	Maximum junction temperature	150	°C
Storage Temperature	Operating temperature range	-55 to +150	°C

Instructions for Use:

1. Handling Precautions:

   • Handle with care to avoid damage to the leads and body.
   • Use appropriate ESD protection when handling to prevent damage from static electricity.

2. Mounting:

   • Ensure correct orientation before soldering.
   • Do not exceed recommended torque values when securing screws in heatsink applications.

3. Soldering:

   • Solder within the recommended temperature and time limits to avoid thermal damage.
   • Allow adequate cooling post-soldering.

4. Electrical Connections:

   • Verify all electrical connections are secure and meet specifications.
   • Ensure gate drive circuitry is properly designed to minimize switching losses.

5. Thermal Management:

   • Ensure adequate heat sinking if operating near maximum power dissipation.
   • Monitor device temperature to ensure it stays within operational limits.

6. Storage:

   • Store in a dry, cool environment away from direct sunlight.
   • Keep in original packaging until ready for use to protect against ESD.

(For reference only)