Details

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BUY BSM35GD120DN2E322 https://www.utsource.net/itm/p/2201291.html

Parameter	Description	Value	Unit
Device Type	High Voltage Power MOSFET	-	-
Part Number	BSM35GD120DN2E322	-	-
Drain-Source Voltage (Vds)	Maximum voltage that can be applied between drain and source terminals	1200	V
Continuous Drain Current (Id)	Maximum continuous current through the drain terminal	35	A
Peak Pulse Drain Current (Idm)	Maximum pulse current through the drain terminal	240	A
Gate-Source Voltage (Vgs)	Maximum voltage that can be applied between gate and source terminals	±20	V
Rds(on) @ Vgs=15V	On-resistance at given gate-source voltage	160	mΩ
Total Power Dissipation (Ptot)	Maximum power dissipation under specified conditions	197	W
Junction Temperature (Tj)	Maximum allowable junction temperature	175	°C
Storage Temperature Range	Temperature range for storage	-55 to +175	°C
Package Type	Packaging type	D2PAK-7L	-

Instructions:

1. Handling Precautions: This device is sensitive to electrostatic discharge (ESD). Use proper ESD protection measures during handling and installation.
2. Mounting: Ensure proper thermal management by using adequate heatsinks or cooling solutions, especially when operating near maximum power dissipation.
3. Soldering: Follow recommended soldering profiles to avoid damage. Typical reflow soldering temperatures should not exceed the maximum junction temperature.
4. Operating Conditions: Operate within specified voltage and current limits to ensure reliable performance and longevity.
5. Gate Drive: Ensure gate drive signals are within the specified gate-source voltage range to prevent gate oxide damage.
6. Storage: Store in a dry, cool environment within the specified storage temperature range to maintain component integrity.

(For reference only)