Details

---

BUY AT28BV64B-20TU https://www.utsource.net/itm/p/4230585.html
64K (8K x 8) Battery-Voltage Parallel EEPROM with Page Write and Software Data Protection

Parameter	Description	Value
Device	64K x 8-Bit CMOS Flash Memory	AT28BV64B-20TU
Package	28-Pin Plastic Thin Small Outline Package (TSSOP)	TSSOP-28
Operating Voltage	VCC (Supply Voltage)	2.7V to 5.5V
Data Output	Data Output High-Level Voltage (VOH) at IOL = -0.4mA, VCC = 5.0V	Min: 2.4V
	Data Output Low-Level Voltage (VOL) at IOH = 0.4mA, VCC = 5.0V	Max: 0.4V
Access Time	tAA (Access Time)	20ns
Write Cycle Time	tWC (Write Cycle Time)	1ms
Erase/Program Time	tEB (Block Erase Time)	1s
	tPS (Page Program Time)	2ms
Endurance	Endurance (Number of Write/Erase Cycles per Block)	100,000 cycles
Data Retention	Data Retention (Retention Time)	10 years
Temperature Range	Operating Temperature Range	-40°C to +85°C
Storage Temperature	Storage Temperature Range	-65°C to +150°C
Organization	Memory Organization	64K x 8
Programming Voltage	Programming Voltage (VPP)	Not Required
Standby Current	Standby Current (ISB) at VCC = 5.0V	1μA
Active Current	Active Current (IAV) at VCC = 5.0V, fCLK = 25MHz	10mA

Instructions for Use:

1. Power Supply:

   • Ensure the supply voltage (VCC) is within the range of 2.7V to 5.5V.
   • Connect the ground (GND) pin to a stable ground reference.

2. Addressing:

   • Use the address lines (A0-A15) to select the desired memory location.
   • Address lines should be stable before the rising edge of the clock (CLK).

3. Data Input/Output:

   • Data is read from or written to the memory using the data lines (D0-D7).
   • Ensure the data lines are properly configured as inputs or outputs based on the operation.

4. Control Signals:

   • Chip Select (CS#): Low to enable the device.
   • Output Enable (OE#): Low to enable data output.
   • Write Enable (WE#): Low to initiate a write operation.
   • Write Protect (WP#): Low to prevent accidental writes.

5. Programming and Erasing:

   • Erase: To erase a block, set the appropriate address and issue the erase command. The block erase time is 1 second.
   • Program: To program a page, set the appropriate address and data, and issue the program command. The page program time is 2 milliseconds.

6. Timing:

   • Ensure all timing parameters are met, especially the access time (tAA) of 20ns and the write cycle time (tWC) of 1ms.

7. Handling:

   • Handle the device with care to avoid electrostatic discharge (ESD) damage.
   • Store the device in a controlled environment within the specified temperature range.

8. Testing:

   • Verify the functionality of the device by reading and writing to known addresses and checking the data integrity.

For detailed programming and application notes, refer to the datasheet provided by the manufacturer.

(For reference only)