Details

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BUY AT49F040-90PC https://www.utsource.net/itm/p/4232030.html
4-Megabit 512K x 8 5-volt Only CMOS Flash Memory

Parameter	Description	Value	Unit
Device Type	Flash Memory
Density	Memory Density	512 K x 8-bit
Package	Package Type	44-Pin PLCC
Operating Voltage (Vcc)	Supply Voltage Range	2.7 to 3.6	V
Programming Voltage (Vpp)	Programming Voltage Range	12.0	V
Access Time	Access Time	90	ns
Programming Time	Typical Programming Time	2.5	ms
Erase Time	Typical Erase Time	1.0	s
Endurance	Write/Erase Cycles	100,000
Data Retention	Data Retention Time	10	years
Operating Temperature	Operating Temperature Range	-40 to +85	°C
Storage Temperature	Storage Temperature Range	-65 to +150	°C
Standby Current	Standby Current	1.0	μA
Active Current	Active Current	15	mA
Programming Current	Programming Current	10	mA

Instructions for Use

1. Power Supply:

   • Ensure that the supply voltage (Vcc) is within the range of 2.7V to 3.6V.
   • The programming voltage (Vpp) must be set to 12.0V.

2. Pin Configuration:

   • Refer to the pinout diagram provided in the datasheet to ensure correct connections.
   • Pay special attention to the power, ground, and control signals.

3. Programming:

   • Apply the programming voltage (Vpp) to the appropriate pin.
   • Use the correct sequence of control signals (CE#, OE#, WE#, etc.) to initiate the programming cycle.
   • The typical programming time is 2.5 milliseconds.

4. Erasing:

   • To erase the memory, apply the programming voltage (Vpp) and use the appropriate control signals.
   • The typical erase time is 1 second.

5. Reading:

   • Apply the supply voltage (Vcc) and use the control signals to read data from the memory.
   • The access time is 90 nanoseconds.

6. Temperature Considerations:

   • Ensure that the operating temperature is within the range of -40°C to +85°C.
   • Store the device in an environment with temperatures between -65°C and +150°C.

7. Current Consumption:

   • Monitor the current consumption to ensure it does not exceed the specified limits:
     • Standby current should not exceed 1.0 μA.
     • Active current should not exceed 15 mA.
     • Programming current should not exceed 10 mA.

8. Handling:

   • Handle the device with care to avoid damage from electrostatic discharge (ESD).
   • Follow proper soldering techniques to ensure reliable connections.

For detailed information and specific application notes, refer to the official datasheet provided by Atmel (now Microchip Technology).

(For reference only)