Details

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64K (8K x 8) Parallel EEPROM with Page Write and Software Data Protection

Parameter	Description	Value
Device Type	High Performance CMOS 8K x 8 Parallel EEPROM	-
Package	28-Pin Plastic DIP (Dual In-line Package)	-
Operating Voltage	VCC (Supply Voltage)	2.7V to 5.5V
Standby Current	ICC (Quiescent Current)	1 μA (max)
Active Current	ICC (Active Current)	10 mA (max)
Write Cycle Time	tWC (Write Cycle Time)	5 ms (max)
Page Write Time	tPW (Page Write Time)	5 ms (max)
Data Retention	Data Retention Time	10 years
Endurance	Write/Read Cycles	1,000,000
Temperature Range	Operating Temperature Range	-40°C to 85°C
Storage Temperature	Storage Temperature Range	-65°C to 150°C
Organization	Memory Organization	8K x 8
Access Time	tAA (Access Time)	70 ns (max)
Write Protect Pin	WP (Write Protect Pin)	Active Low
Chip Select Pin	CS (Chip Select Pin)	Active Low
Output Enable Pin	OE (Output Enable Pin)	Active Low
Write Enable Pin	WE (Write Enable Pin)	Active Low

Instructions for Use

1. Power Supply:

   • Ensure the supply voltage (VCC) is within the specified range of 2.7V to 5.5V.
   • Connect the ground pin (GND) to the system ground.

2. Pin Configuration:

   • VCC (Pin 28): Connect to the positive power supply.
   • GND (Pin 14): Connect to the ground.
   • A0-A12 (Pins 1-13): Address lines.
   • D0-D7 (Pins 15-22): Data lines.
   • CS (Pin 27): Chip select; active low.
   • OE (Pin 26): Output enable; active low.
   • WE (Pin 25): Write enable; active low.
   • WP (Pin 24): Write protect; active low.

3. Write Operation:

   • Set the address lines (A0-A12) to the desired memory location.
   • Set the data lines (D0-D7) to the data to be written.
   • Pull CS and WE low to initiate the write cycle.
   • Wait for the write cycle time (tWC) to complete before performing another operation.

4. Read Operation:

   • Set the address lines (A0-A12) to the desired memory location.
   • Pull CS and OE low to enable the output.
   • The data will be available on the data lines (D0-D7) after the access time (tAA).

5. Write Protection:

   • To prevent accidental writes, pull the WP pin low.
   • When WP is high, the device can be written to.

6. Power Down:

   • During power-down, ensure that the VCC is reduced to 0V before disconnecting the ground to avoid data corruption.

7. Handling Precautions:

   • Handle the device with care to avoid static discharge.
   • Store the device in a dry environment to prevent moisture damage.

For more detailed information, refer to the datasheet provided by the manufacturer.

(For reference only)