Details
BUY CY62137VNLL-70ZSXET https://www.utsource.net/itm/p/4352972.html
SRAM 2MBIT 70NS 44TSOP
Parameter | Description | Value |
---|---|---|
Device Type | High-Speed CMOS Static RAM | 512K x 8 |
Package Type | TSSOP (Thin Small Outline Package) | 24-Pin |
Supply Voltage (Vcc) | Operating Supply Voltage | 2.5V to 3.6V |
Standby Current (Icc) | Current Consumption in Standby Mode | 2 μA (max) |
Active Current (Icc) | Current Consumption in Active Mode | 35 mA (max) |
Access Time (tAA) | Access Time from Address Valid to Data Valid | 70 ns (max) |
Data Retention Time | Time Data is Retained Without Power Loss | 20 years |
Operating Temperature | Range of Operating Temperatures | -40°C to 85°C |
Storage Temperature | Range of Storage Temperatures | -65°C to 150°C |
Endurance | Number of Read/Write Cycles | Unlimited |
Output Drive Strength | Output Drive Capability | 24 mA |
Input Clamping Voltage | Maximum Input Voltage with Clamp Diodes Active | ±0.5V |
Package Marking | Device Identification on Package | CY62137VNLL-70ZSXET |
Instructions for Use:
Power Supply:
- Ensure the supply voltage (Vcc) is within the specified range of 2.5V to 3.6V.
- Connect the ground (GND) pin to a stable ground reference.
Addressing:
- Apply the desired address to the address lines (A0-A18) to select the memory location.
- The chip select (CS) and output enable (OE) pins must be active (low) for the device to respond to address changes.
Data Input/Output:
- For read operations, set the write enable (WE) pin high and the output enable (OE) pin low.
- For write operations, set the write enable (WE) pin low and the output enable (OE) pin high.
- Data is input or output through the data lines (DQ0-DQ7).
Timing:
- Ensure that the access time (tAA) is respected to avoid data corruption. The maximum access time is 70 ns.
- Maintain proper timing relationships between address, control, and data signals.
Temperature Considerations:
- Operate the device within the specified temperature range of -40°C to 85°C.
- Store the device in a temperature range of -65°C to 150°C to ensure long-term reliability.
Handling:
- Handle the device with care to avoid damage to the pins and package.
- Follow standard ESD (Electrostatic Discharge) precautions to prevent damage to the device.
Testing:
- Perform functional tests to verify the operation of the device after installation.
- Use appropriate test patterns to check all memory locations and functions.
Storage:
- Store the device in a dry, cool place to prevent moisture damage.
- Keep the device in its original packaging until ready for use to protect against static and physical damage.
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