Details

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BUY IS42S16400F-7TL https://www.utsource.net/itm/p/4548328.html
1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM

Parameter	Symbol	Min	Typ	Max	Unit
Supply Voltage	VCC	2.5	-	3.6	V
Standby Current	ICCSBY	-	5	-	μA
Active Current (Read/Write)	ICCA	-	80	-	mA
Access Time	tAA	-	7	-	ns
Cycle Time	tCYCLE	-	10	-	ns
Row Address Strobe	tRAS	-	45	-	ns
Row Precharge Time	tRP	-	45	-	ns
Column Address Strobe	tCAS	-	2	-	clocks
Data Output Hold Time	tHOLD	-	2	-	ns
Data Input Setup Time	tIS	-	2	-	ns
Power-down Exit Time	tXP	-	100	-	ns

Instructions for IS42S16400F-7TL

1. Power Supply:

   • Ensure the supply voltage (V_CC) is within the range of 2.5V to 3.6V.

2. Standby Mode:

   • To enter standby mode, set the chip enable (CE) and output enable (OE) pins to high. The standby current (I_CCSBY) should be around 5μA.

3. Active Mode:

   • To enter active mode, set the chip enable (CE) pin to low. The active current (I_CCA) can reach up to 80mA during read/write operations.

4. Access Time:

   • The access time (t_AA) is 7ns, which is the time from the valid address to the data being available on the output pins.

5. Cycle Time:

   • The cycle time (t_CYCLE) is 10ns, which is the minimum time required between successive accesses.

6. Row Address Strobe (RAS):

   • The row address strobe time (t_RAS) is 45ns, which is the minimum time the RAS signal must be active.

7. Row Precharge Time:

   • The row precharge time (t_RP) is 45ns, which is the minimum time required to precharge the row before a new row can be accessed.

8. Column Address Strobe (CAS):

   • The column address strobe time (t_CAS) is 2 clock cycles, which is the latency between the CAS signal and the data being available.

9. Data Output Hold Time:

   • The data output hold time (t_HOLD) is 2ns, which is the time the data must remain stable after the falling edge of the clock.

10. Data Input Setup Time:

    • The data input setup time (t_IS) is 2ns, which is the time the data must be stable before the rising edge of the clock.

11. Power-down Exit Time:

    • The power-down exit time (t_XP) is 100ns, which is the time required to exit power-down mode and return to normal operation.

12. Addressing:

    • Use the appropriate address lines (A0-A12) to select the desired memory location. The device supports 16M x 16-bit configuration.

13. Data Lines:

    • Use the DQ0-DQ15 data lines for data input and output.

14. Control Signals:

    • CE (Chip Enable): Low to activate the chip.
    • OE (Output Enable): Low to enable data output.
    • WE (Write Enable): Low to write data to the memory.
    • RAS (Row Address Strobe): Low to latch the row address.
    • CAS (Column Address Strobe): Low to latch the column address.

15. Power-down Mode:

    • To enter power-down mode, set the CE, OE, and WE pins to high. To exit, set CE to low and wait for the power-down exit time (t_XP).

(For reference only)