Details

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BUY IRS21850SPBF https://www.utsource.net/itm/p/4581820.html
The IRS21850SPBF is a high voltage high speed power MOSFET and IGBT single High-side Gate Driver IC with propagation delay matched output channels. Proprietary HVIC and latch immune CMOS technology enables ruggedized monolithic construction. The floating logic input is compatible with standard CMOS or LSTTL output and down to 3.3V logic and can be operated up to 600V above the ground. The output driver features a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive a N-channel power MOSFET or IGBT in the high-side configuration, which operates up to 600V.

Parameter	Symbol	Min	Typ	Max	Unit	Conditions
Supply Voltage	VCC	10	-	20	V	-
Undervoltage Lockout (UVLO) Threshold	VUVLO	-	10.0	-	V	Rising
UVLO Hysteresis	ΔVUVLO	-	0.8	-	V	-
High-Side Driver Output Current	IHSD	-	1.5	-	A	-
Low-Side Driver Output Current	ILSD	-	1.5	-	A	-
Propagation Delay Time	td	40	-	90	ns	-
Pulse Width Distortion	tPWD	-	15	-	ns	-
Maximum Operating Frequency	fMAX	-	-	500	kHz	-
Maximum Junction Temperature	TJ(MAX)	-	-	150	°C	-
Storage Temperature Range	TSTG	-40	-	150	°C	-

Instructions for IRS21850SPBF

1. Supply Voltage (V_CC):

   • Ensure the supply voltage is within the range of 10V to 20V to avoid damage or improper operation.

2. Undervoltage Lockout (UVLO):

   • The device will not operate if the supply voltage drops below 10.0V. The hysteresis of 0.8V ensures stable operation during voltage fluctuations.

3. Driver Output Current:

   • Both high-side and low-side drivers can source up to 1.5A. Ensure that the load does not exceed this limit to prevent overheating or damage.

4. Propagation Delay Time (t_d):

   • The propagation delay time is between 40ns and 90ns. This should be considered when designing timing circuits to ensure proper synchronization.

5. Pulse Width Distortion (t_PWD):

   • The pulse width distortion is typically 15ns. This parameter is important for maintaining accurate pulse widths in high-frequency applications.

6. Maximum Operating Frequency (f_MAX):

   • The device can operate up to a maximum frequency of 500kHz. Exceeding this frequency may result in reduced performance or failure.

7. Maximum Junction Temperature (T_J(MAX)):

   • The maximum junction temperature is 150°C. Ensure adequate heat dissipation to keep the temperature below this limit.

8. Storage Temperature Range (T_STG):

   • The device can be stored at temperatures ranging from -40°C to 150°C. Avoid exposing the device to temperatures outside this range to prevent damage.

Additional Notes:

• Always refer to the datasheet for the most accurate and detailed information.
• Proper PCB layout and component selection are crucial for optimal performance.
• Use appropriate decoupling capacitors near the power supply pins to reduce noise and improve stability.

(For reference only)