Details

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BUY K9GBG08UOA-SCBO https://www.utsource.net/itm/p/4599410.html

Parameter	Description	Value	Unit
Product Name	NAND Flash Memory	K9GBG08UOA-SCBO
Capacity	Storage capacity	8 Gb (1 GB)
Package Type	Package format	WFBGA
Number of Pins	Number of connection pins	48
Operating Voltage	Supply voltage range	2.7 V to 3.6 V	V
Interface Standard	Communication protocol	Toggle Mode DDR 2.0
Data I/O Width	Data input/output bus width	x8	bits
Page Size	Size of a page	2,112 bytes	bytes
Block Size	Size of an erasable block	256 pages
Die Configuration	Internal memory structure	Single Die
Program Time	Maximum time required for programming	300	μs
Erase Time	Maximum time required for erasing	2 ms (64KB), 20 ms (Full Chip)	ms
Endurance	Number of program/erase cycles	100,000
Data Retention	Guaranteed data retention time under specified conditions	10 years	years
Operating Temperature	Range of temperatures where the device can operate reliably	-40°C to +85°C	°C
Storage Temperature	Range of temperatures where the device can be stored without damage	-40°C to +85°C	°C

Instructions:

1. Power Supply: Ensure that the supply voltage is within the operating voltage range (2.7 V to 3.6 V). Avoid exceeding this range to prevent damage.
2. Interface Setup: Configure the interface according to the Toggle Mode DDR 2.0 standard. Ensure proper synchronization and timing parameters are set as per the datasheet.
3. Programming: Use the provided page size (2,112 bytes) for programming operations. Do not exceed the maximum program time of 300 μs.
4. Erasing: When performing block erases, ensure the erase operation does not exceed 2 ms for a 64KB block or 20 ms for a full chip erase.
5. Environmental Conditions: Operate and store the device within the specified temperature ranges to ensure reliability and longevity.
6. Handling Precautions: Handle with care to avoid electrostatic discharge (ESD) damage. Follow anti-static protocols during handling and installation.

(For reference only)