Details

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BUY MT46V64M8P-5B:F https://www.utsource.net/itm/p/4832844.html
IC DRAM 512M PARALLEL 66TSOP

Parameter	Description	Value
Part Number	Full part number	MT46V64M8P-5B:F
Type	Synchronous DRAM (SDRAM)
Density	Total memory capacity	64 Mbit
Organization	Data width x Row x Column	8M x 8
Voltage Supply (Vcc)	Operating voltage	3.3V ± 0.3V
Operating Temperature	Range for industrial applications	-40°C to +85°C
Access Time (tAC)	Access time from clock	5.0 ns max
Cycle Time (tRC)	Row cycle time	60 ns max
Refresh Rate	Refresh cycle required to maintain data integrity	8192 cycles/64ms
Package Type	Type of package	BGA (Ball Grid Array)
Pin Count	Number of pins	48
CAS Latency	CAS latency settings	3
RAS# to CAS# Delay	Minimum delay between RAS# and CAS#	3
Row Precharge Time	Time required to precharge a row	20 ns max
Data Output Enable	Time from OE# low to valid data output	2.5 ns max
Data Output Disable	Time from OE# high to data output disabled	2.5 ns max
Write Recovery Time	Time required after the last write before the next access	20 ns max
Power Consumption	Typical power consumption	2.5W (active), 0.5W (standby)

Instructions for Use:

1. Power Supply:

   • Ensure that the Vcc is within the specified range of 3.3V ± 0.3V.
   • Use a stable power supply to avoid fluctuations that can cause data corruption.

2. Clock Signal:

   • The SDRAM operates with a clock signal. Ensure the clock frequency is appropriate for the access times specified.

3. Addressing:

   • Address lines (A0-A12) are used to select the specific memory location.
   • Row and column addresses are multiplexed over these lines.

4. Control Signals:

   • CS# (Chip Select): Active low. When low, the chip is selected.
   • RAS# (Row Address Strobe): Active low. Used to latch the row address.
   • CAS# (Column Address Strobe): Active low. Used to latch the column address.
   • WE# (Write Enable): Active low. Used to control read/write operations.
   • OE# (Output Enable): Active low. Enables data output during read operations.

5. Refresh:

   • Perform refresh cycles every 64 milliseconds to maintain data integrity. Each refresh cycle should be 8192 cycles long.

6. Data I/O:

   • Data lines (DQ0-DQ7) are used for data input and output.
   • Ensure that data is stable on the DQ lines before the write enable signal is asserted.

7. Initialization:

   • After power-up, perform a reset sequence to initialize the SDRAM.
   • Follow the initialization sequence as specified in the datasheet to ensure proper operation.

8. Temperature Considerations:

   • Operate the device within the specified temperature range (-40°C to +85°C) to avoid damage and ensure reliable performance.

9. Handling:

   • Handle the BGA package with care to avoid damaging the balls or the substrate.
   • Use proper ESD (Electrostatic Discharge) precautions to prevent damage to the device.

For detailed timing diagrams and more specific information, refer to the datasheet provided by the manufacturer.

(For reference only)