Details

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BUY MT29F2G08ABAEAWP-I https://www.utsource.net/itm/p/4834696.html

Parameter	Description	Value
Device Type	NAND Flash Memory	2Gb, 3.3V
Package Type	BGA (Ball Grid Array)	60-ball
Operating Voltage (Vcc)	Supply voltage for core operations	2.7V to 3.6V
Interface	I/O Interface	8-bit
Page Size	Data size per page	2112 bytes (2K + 64)
Block Size	Number of pages per block	64 pages/block
Plane Size	Number of blocks per plane	2048 blocks/plane
Programming Time	Maximum time required to program a page	250 μs
Erase Time	Maximum time required to erase a block	1.8 ms
Read Time	Maximum time required to read data from a page	25 μs
Data Retention	Guaranteed retention period at specified conditions	10 years
Endurance	Number of guaranteed program/erase cycles	100,000 cycles
Temperature Range	Operating temperature range	-40°C to +85°C
Storage Temperature	Non-operating temperature range	-55°C to +125°C

Instructions for Use:

1. Power Supply: Ensure the supply voltage is within the specified operating range of 2.7V to 3.6V.
2. Initialization: Upon power-up, the device should be initialized by sending the reset command.
3. Command Sequence: Use the appropriate command sequences for read, program, and erase operations as detailed in the datasheet.
4. Error Handling: Implement error checking mechanisms such as Bad Block Management and ECC (Error Correction Code).
5. Thermal Considerations: Operate within the specified temperature ranges to ensure reliable performance and longevity.
6. Handling Static: The device is sensitive to static electricity; handle with appropriate ESD precautions.
7. Programming Guidelines: Follow the programming guidelines strictly to avoid damage or data corruption.

For more detailed instructions and advanced features, refer to the full datasheet provided by Micron Technology.

(For reference only)