Details

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BUY MX29F1610AMC-90 https://www.utsource.net/itm/p/4834723.html

Parameter	Symbol	Conditions	Min	Typ	Max	Unit
Supply Voltage	VCC	Operating	2.7		3.6	V
Standby Current	ISB	VCC = 3.0V		1		μA
Active Current	IOP	VCC = 3.0V, TA		5		mA
Access Time	tACC	VCC = 3.0V, TA		90		ns
Block Erase Time	tBE	VCC = 3.0V, TA		40	200	ms
Chip Erase Time	tCE	VCC = 3.0V, TA		200	600	ms
Page Program Time	tPP	VCC = 3.0V, TA		1	5	ms
Data Retention		@25°C		10		Years
Operating Temperature	TA		-40		85	°C
Storage Temperature	TSTG		-40		85	°C

Instructions for MX29F1610AMC-90

1. Power Supply:

   • Ensure the supply voltage (VCC) is within the range of 2.7V to 3.6V.

2. Initialization:

   • Apply power and ensure all control lines are properly configured before initiating any commands.

3. Reading Data:

   • Use the Read command sequence to access data from the flash memory.
   • Access time should not exceed 90ns under standard operating conditions.

4. Programming Data:

   • Before programming, ensure that the block or page is erased.
   • Programming a page typically takes between 1ms to 5ms.

5. Erasing Blocks/Chip:

   • Block erase operations can take between 40ms to 200ms.
   • Chip erase operations are more extensive and can take between 200ms to 600ms.

6. Standby Mode:

   • When not in use, transition to standby mode to minimize current consumption, which should be around 1μA.

7. Temperature Considerations:

   • Operate within the temperature range of -40°C to 85°C for reliable performance.
   • Store the device in an environment with temperatures ranging from -40°C to 85°C.

8. Data Integrity:

   • Data retention is guaranteed for up to 10 years at room temperature (25°C).

Note: Always refer to the specific datasheet provided by the manufacturer for detailed and accurate specifications and instructions.

(For reference only)