Details

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BUY MX25L512EMI-10G https://www.utsource.net/itm/p/4837061.html
512K-BIT [x 1/x 2] CMOS SERIAL FLASH

Parameter	Description	Value	Unit
Device	Device Type	MX25L512EMI-10G	-
Memory Size	Total Memory	512 Kbit	-
Organization	Memory Organization	64K x 8	-
VCC Supply Voltage	Operating Voltage Range	2.7 to 3.6	V
VCCQ Supply Voltage	I/O Supply Voltage	1.65 to 3.6	V
Standby Current	Standby Current (Typical)	1.0	μA
Active Current	Active Current (Typical)	5.0	mA
Programming Time	Page Program Time (Typical)	3.0	ms
Erase Time	Sector Erase Time (Typical)	300	ms
Block Erase Time	Block Erase Time (Typical)	1500	ms
Chip Erase Time	Chip Erase Time (Typical)	3000	ms
Data Retention	Data Retention	20	years
Operating Temperature	Industrial Temperature Range	-40 to +85	°C
Package	Package Type	8-SOIC	-
Speed Grade	Access Time	10	ns

Instructions for Use:

1. Power Supply:

   • Connect the V_CC pin to a power supply within the range of 2.7V to 3.6V.
   • Connect the V_CCQ pin to a power supply within the range of 1.65V to 3.6V.

2. Ground Connection:

   • Ensure that the GND pin is connected to a stable ground reference.

3. Signal Levels:

   • All input signals should be within the V_CCQ range.
   • Output signals will be within the V_CCQ range.

4. Programming:

   • Use the standard SPI commands to program the device.
   • The typical page program time is 3.0 ms.

5. Erasing:

   • Use the sector, block, or chip erase commands as needed.
   • Sector erase typically takes 300 ms.
   • Block erase typically takes 1500 ms.
   • Chip erase typically takes 3000 ms.

6. Read Operations:

   • Use the read command to access data from the memory.
   • The access time is 10 ns.

7. Temperature Considerations:

   • Ensure that the operating temperature is within the industrial range of -40°C to +85°C.

8. Storage:

   • Store the device in a dry environment to prevent moisture damage.
   • Data retention is guaranteed for up to 20 years under proper storage conditions.

9. Handling:

   • Handle the device with care to avoid static discharge, which can damage the internal circuitry.
   • Use appropriate ESD protection when handling the device.

10. Soldering:

    • Follow the recommended soldering profile to ensure reliable connections.
    • Avoid overheating the device during soldering.

11. Testing:

    • After assembly, verify the functionality of the device using the provided test vectors or by performing read/write/erase operations.

For detailed command sequences and timing diagrams, refer to the datasheet provided by the manufacturer.

(For reference only)