Details

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Parameter	Description	Value
Part Number	Full Part Number	MT41K512M8RH-125:E
Memory Type	Type of Memory	DDR3 SDRAM
Density	Total Memory Density	512 Mbit
Organization	Memory Organization	64M x 8
Voltage (Vdd/Vddq)	Supply Voltage	1.35V ± 0.075V
Speed Grade	Access Time	125 MHz (tCK = 8 ns)
Package	Package Type	FBGA
Pin Count	Number of Pins	96
Operating Temperature	Temperature Range	-40°C to +85°C
Data Rate	Maximum Data Rate	125 MT/s
CAS Latency	CAS Latency (CL)	7
RAS# to CAS# Delay	RAS# to CAS# Delay (tRCD)	7
Row Precharge Time	Row Precharge Time (tRP)	7
Active to Precharge	Active to Precharge Delay (tRAS)	20
Refresh Cycle Time	Refresh Cycle Time (tREFI)	7.8 μs
Self-Refresh Exit	Self-Refresh Exit Time (tXSR)	128 ns
Write Recovery Time	Write Recovery Time (tWR)	7
Minimum Cycle Time	Minimum Cycle Time (tCK)	8 ns
Minimum Write Pulse	Minimum Write Pulse Width (tWPL)	2.5 ns
Minimum Read Pulse	Minimum Read Pulse Width (tRPL)	2.5 ns
Power Down Mode	Power Down Entry/Exit Time (tPD)	100 ns
Thermal Resistance	Junction to Ambient Thermal Resistance (θJA)	30.4 °C/W

Instructions for Use:

1. Supply Voltage:

   • Ensure that the supply voltage (Vdd and Vddq) is set to 1.35V ± 0.075V.

2. Power-Up Sequence:

   • Apply Vdd and Vddq simultaneously.
   • Wait for at least 200 μs after power-up before issuing any commands.
   • Perform a reset or initialization sequence as specified in the datasheet.

3. Initialization:

   • After power-up, issue a Mode Register Set (MRS) command to initialize the device.
   • Set the necessary mode register parameters such as CAS latency, burst length, etc.

4. Accessing Memory:

   • Use the appropriate read and write commands to access memory locations.
   • Ensure that all timing parameters (tRCD, tRP, tRAS, etc.) are met to avoid data corruption.

5. Refresh:

   • The device requires periodic refresh cycles to maintain data integrity.
   • The refresh cycle time (tREFI) is 7.8 μs, and a refresh command must be issued every 7.8 μs.

6. Power Management:

   • To enter power-down mode, issue a power-down command.
   • To exit power-down mode, wait for the specified exit time (tPD) before issuing any other commands.

7. Thermal Considerations:

   • Ensure adequate cooling to keep the junction temperature within the operating range.
   • The thermal resistance (θJA) is 30.4 °C/W, so consider the ambient temperature and heat dissipation when designing the system.

8. Handling:

   • Handle the device with care to avoid static discharge and physical damage.
   • Follow ESD (Electrostatic Discharge) precautions during handling and assembly.

For detailed information and specific application notes, refer to the full datasheet provided by Micron Technology.

(For reference only)