Details

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BUY MT46V16M16P-6T:K https://www.utsource.net/itm/p/4904545.html

Parameter	Description	Value
Part Number	Full Part Number	MT46V16M16P-6T:K
Type	Device Type	SDRAM (Synchronous DRAM)
Density	Memory Density	256 Mbit (32 MByte)
Organization	Memory Organization	16M x 16 bits
Voltage	Supply Voltage (Vcc)	3.3V ± 0.3V
Operating Temperature	Operating Temperature Range	-40°C to +85°C
Speed Grade	Access Time (tAC)	6 ns
Package	Package Type	BGA (Ball Grid Array)
Pin Count	Number of Pins	60
Data Width	Data Bus Width	16 bits
Bank Addressing	Number of Banks	4
Row Addressing	Row Address Bits	13
Column Addressing	Column Address Bits	9
Refresh	Refresh Cycle Time (tREF)	64 ms (8192 cycles)
CAS Latency	CAS Latency	CL = 3
Power Consumption	Active Power Consumption	2.2W (Typical)
Standby Power Consumption	Standby Power Consumption	0.1W (Typical)

Instructions for Use:

1. Power Supply:

   • Ensure the supply voltage (Vcc) is within the specified range of 3.3V ± 0.3V.
   • Connect Vcc to the appropriate power supply and ground (GND) to the system ground.

2. Signal Connections:

   • Connect the address lines (A0-A12) to the corresponding address outputs from the memory controller.
   • Connect the data lines (DQ0-DQ15) to the data bus of the system.
   • Connect the control signals (CS#, RAS#, CAS#, WE#, DQM0, DQM1) to the corresponding control outputs from the memory controller.

3. Timing Parameters:

   • Ensure that all timing parameters, including access time (tAC), refresh cycle time (tREF), and CAS latency (CL), are met as per the specifications.
   • Use a memory controller that supports the required timing parameters for optimal performance.

4. Refresh Management:

   • Implement a refresh cycle every 64 ms to maintain data integrity.
   • The refresh can be managed by the memory controller or through an external refresh circuit.

5. Bank Selection:

   • Use the bank address lines (BA0, BA1) to select one of the four banks.
   • Each bank operates independently, allowing for concurrent operations in different banks.

6. Data Masking:

   • Use the DQM0 and DQM1 signals to mask data during write operations.
   • DQM0 controls the lower 8 bits (DQ0-DQ7), and DQM1 controls the upper 8 bits (DQ8-DQ15).

7. Power Management:

   • To reduce power consumption, use the low-power modes provided by the SDRAM.
   • Enter self-refresh mode when the system is idle to minimize active power consumption.

8. Testing and Validation:

   • Perform thorough testing to ensure the SDRAM is functioning correctly.
   • Use memory test patterns and diagnostic tools to validate the memory operations.

By following these instructions, you can ensure reliable and efficient operation of the MT46V16M16P-6T:K SDRAM in your application.

(For reference only)