Details

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BUY MT47H128M16RT-25E https://www.utsource.net/itm/p/4905300.html

Parameter	Description	Value
Device Type	Memory Type	DDR3 SDRAM
Density	Total Memory	16 Gb (2 Gb x 8)
Organization	Internal Banks	8 Banks, 8-bit I/O width
Supply Voltage (Vdd/Vddq)	Operating Range	1.35V ± 0.13V
Operating Temperature	Commercial Grade	0°C to 85°C
Data Rate	Maximum Data Rate	1600 Mbps
CAS Latency (CL)	Supported Values	11, 10, 9, 8, 7
RAS# to CAS# Delay (tRCD)	Supported Values	15, 14, 13, 12, 11, 10, 9, 8, 7, 6, 5
Row Precharge Time (tRP)	Supported Values	15, 14, 13, 12, 11, 10, 9, 8, 7, 6, 5
Row Active Time (tRAS)	Minimum Value	36 ns
Refresh Cycle Time (tREFI)	Standard Value	7.8 μs
Partial Array Self-Refresh (PASR)	Modes	0, 1, 2, 3, 4, 5, 6, 7
Deep Power Down (DPD)	Entry/Exit	Command-based
Package	Type	FBGA (Fine Pitch Ball Grid Array)
Ball Pitch	Pitch Size	0.8 mm
Ball Count	Total Balls	256
JEDEC Standard	Compliance	JESD79-3F

Instructions for Use

1. Power Supply:

   • Ensure that the supply voltage (Vdd and Vddq) is within the specified range of 1.35V ± 0.13V.
   • Connect the ground (Vss) and power supply (Vdd) pins as per the datasheet.

2. Initialization:

   • After power-up, perform a reset by asserting the RESET# pin.
   • Configure the memory using the Mode Register Set (MRS) command to set the desired operating parameters such as CAS latency, RAS# to CAS# delay, and row precharge time.

3. Memory Access:

   • Use the appropriate commands (e.g., ACTIVATE, READ, WRITE, PRECHARGE) to access the memory.
   • Ensure that the timing parameters (tRCD, tRP, tRAS) are respected during memory operations.

4. Refresh:

   • Perform periodic refresh cycles to maintain data integrity. The standard refresh cycle time (tREFI) is 7.8 μs.
   • Use the auto-refresh or self-refresh modes as needed.

5. Power Management:

   • To reduce power consumption, use the Partial Array Self-Refresh (PASR) and Deep Power Down (DPD) modes.
   • Enter DPD mode by issuing the DPD command and exit by issuing a NOP command.

6. Signal Integrity:

   • Ensure proper termination of high-speed signals to minimize reflections and crosstalk.
   • Use differential signaling for clock lines (CK and CK#) to improve signal integrity.

7. Thermal Management:

   • Monitor the operating temperature and ensure it stays within the commercial grade range of 0°C to 85°C.
   • Provide adequate cooling if necessary, especially in high-density applications.

8. Handling:

   • Handle the device with care to avoid static damage.
   • Follow anti-static precautions when handling and installing the device.

For detailed information and specific application notes, refer to the official Micron Technology datasheet for the MT47H128M16RT-25E.

(For reference only)