MT47H32M16HR-25EIT:G

MT47H32M16HR-25EIT:G


Specifications
Details

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Parameter Description Value
Product Name 256Mb DDR3 SDRAM MT47H32M16HR-25EIT:G
Organization Micron Technology
Package Type FBGA 96-ball
Operating Voltage VDD, VDDQ 1.35V ± 0.135V
Data Width x16
Memory Density 256Mb
Speed Grade 2533 Mbps (CL = 11)
Temperature Range Commercial (-40°C to +85°C)
Refresh Rate 7.8us (self-refresh)
Access Time tAA 14.6ns
CAS Latency CL 11
Write Recovery Time tWR 15 cycles
Row Address Strobe tRAS 38.75ns
Active to Precharge Delay tRP 14.6ns
Cycle Time tRC 53.3ns
Power Down Mode Available
Self Refresh Mode Available
On-Die Termination Available

Instructions for Use:

  1. Power Supply Requirements: Ensure the power supply voltage (VDD and VDDQ) is set to 1.35V ± 0.135V. Incorrect voltage can lead to device malfunction or damage.

  2. Initialization: Before accessing memory, initialize the device by setting up mode registers as specified in the datasheet. This includes setting the CAS latency (CL) and other timing parameters.

  3. Timing Parameters: Adhere strictly to the specified timing parameters such as access time (tAA), write recovery time (tWR), row address strobe (tRAS), active to precharge delay (tRP), and cycle time (tRC). Non-compliance can result in data corruption or operational instability.

  4. Refresh Operations: Implement a refresh cycle every 7.8 microseconds to maintain data integrity. Use self-refresh mode during periods of inactivity to reduce power consumption.

  5. Power Management: Utilize power-down and self-refresh modes to minimize power consumption when the device is not actively being used.

  6. Signal Integrity: Ensure signal integrity by properly terminating all control and data lines. On-die termination should be enabled to improve signal quality.

  7. Handling Precautions: Handle the device with care to avoid electrostatic discharge (ESD) damage. Follow anti-static protocols during installation and handling.

  8. Environmental Conditions: Operate within the specified temperature range (-40°C to +85°C) to ensure reliable performance. Avoid exposing the device to conditions outside this range.

For detailed specifications and advanced configurations, refer to the official Micron Technology datasheet for MT47H32M16HR-25EIT:G.

(For reference only)

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