Details

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BUY MT48LC16M16A2TG-75D https://www.utsource.net/itm/p/4906770.html

Parameter	Description	Value	Unit
Device Type	Memory Type	SDRAM	-
Density	Total Memory	16 M x 16	bits
Package	Package Type	54-pin TSOP II	-
Supply Voltage (Vcc)	Operating Voltage	3.3	V
Supply Voltage (Vccq)	I/O Voltage	3.3	V
Access Time (tAC)	Access Time	7.5	ns
Cycle Time (tRC)	Cycle Time	50	ns
Row Address Strobe to Column Address Strobe Delay (tRCD)	RAS to CAS Delay	15	ns
Row Precharge Time (tRP)	Row Precharge Time	15	ns
Row Active to Row Active Delay (tRRD)	Row Active to Row Active Delay	15	ns
Refresh Period (tREF)	Refresh Period	64	ms
Data Output Enable Time (tOE)	Data Output Enable Time	4.5	ns
Data Output Disable Time (tOH)	Data Output Disable Time	4.5	ns
Data Hold Time (tDH)	Data Hold Time	2.5	ns
Power Down Exit Time (tXP)	Power Down Exit Time	100	ns
Operating Temperature	Operating Temperature Range	-40 to +85	°C
Storage Temperature	Storage Temperature Range	-55 to +125	°C

Instructions for Use:

1. Power Supply:

   • Connect Vcc and Vccq to a stable 3.3V power supply.
   • Ensure proper decoupling capacitors are placed close to the power pins to minimize noise.

2. Address and Control Signals:

   • Apply row and column addresses during the active cycle.
   • Use control signals such as /RAS, /CAS, and /WE to control memory operations (read, write, refresh).

3. Data Input/Output:

   • Data is latched on the rising edge of the clock signal (CLK).
   • Ensure data lines are properly terminated to prevent reflections and signal integrity issues.

4. Refresh:

   • Perform a refresh cycle every 64 milliseconds to maintain data integrity.
   • Use the auto-refresh command to simplify the refresh process.

5. Power Management:

   • Enter power-down mode by asserting the /CKE (Clock Enable) signal low.
   • Exit power-down mode by deasserting /CKE and waiting for the specified exit time (tXP).

6. Timing Considerations:

   • Adhere to the specified timing parameters to ensure reliable operation.
   • Use a high-speed clock source with low jitter to meet the access time requirements.

7. Handling and Storage:

   • Handle the device with care to avoid static damage.
   • Store the device in a dry, temperature-controlled environment to prevent degradation.

(For reference only)