Details

---

BUY MT48LC4M16A2P-6A:J https://www.utsource.net/itm/p/4906881.html

Parameter	Description	Value
Device	4M x 16-bit SDRAM	-
Package	50-pin TSOP (Thin Small Outline Package)	-
Operating Voltage (Vcc)	Supply Voltage	3.3V ± 0.3V
Operating Temperature (Tamb)	Ambient Operating Temperature	-40°C to +85°C
Data Rate	Maximum Data Rate	133 MHz (67 ns cycle time)
Row Address Strobes (RAS#)	Number of Row Address Strobes	4
Column Address Strobes (CAS#)	Number of Column Address Strobes	4
Bank Select	Number of Banks	4
Refresh Rate	Refresh Cycle Time	64 ms (8192 refresh cycles)
Access Time from CLK	tAC	6.0 ns max
Output Enable Delay	tOE	2.0 ns max
Write Recovery Time	tWR	2.0 ns min
Exit Self-Refresh to Active Command	tXSR	75 ns min
Power Down Exit to Active Command	tXP	12 ns min
Self-Refresh Entry to Exit	tSRE	75 ns min
Active to Precharge Command	tRAS	45 ns min
Precharge to Active Command	tRP	20 ns min
Active to Read/Write Command	tRCD	20 ns min
Column to Column Address Change	tCCD	2.0 ns min

Instructions for Use:

1. Power Supply:

   • Ensure the supply voltage (Vcc) is within the range of 3.0V to 3.6V.
   • Connect Vss (pin 25) to ground.

2. Clock Signal:

   • Apply a stable clock signal to the CLK pin (pin 19).
   • The maximum data rate is 133 MHz.

3. Addressing:

   • Row addresses are latched on the falling edge of RAS# (pins 31-34).
   • Column addresses are latched on the falling edge of CAS# (pins 35-38).

4. Control Signals:

   • CS# (pin 1): Chip Select. Low to activate the device.
   • RAS# (pins 31-34): Row Address Strobe. Low to latch row address.
   • CAS# (pins 35-38): Column Address Strobe. Low to latch column address.
   • WE# (pin 40): Write Enable. Low to write data, high to read data.
   • DQM (pins 41-44): Data Mask. Used to mask individual bytes during write operations.

5. Data I/O:

   • Data is input/output on pins 45-50 and 1-6.
   • Ensure DQM signals are used correctly to mask data during writes.

6. Refresh:

   • Perform a refresh cycle every 64 ms.
   • Use the REF command to initiate a refresh cycle.

7. Power Management:

   • Use the CKE (pin 18) signal to control power-down and self-refresh modes.
   • Set CKE low to enter power-down mode.
   • Set CKE high to exit power-down or self-refresh mode.

8. Timing Considerations:

   • Follow the timing parameters listed in the table to ensure reliable operation.
   • Pay special attention to tRAS, tRP, tRCD, and tCCD to avoid data corruption.

9. Initialization:

   • After power-up, issue a NOP (No Operation) command followed by a PRECHARGE ALL command.
   • Then, issue a MODE REGISTER SET command to configure the mode register as needed.

10. Mode Register:

    • The mode register can be set to configure burst length, burst type, CAS latency, and other settings.
    • Refer to the device datasheet for specific mode register settings.

11. Handling:

    • Handle the device with care to avoid ESD (Electrostatic Discharge) damage.
    • Store the device in an ESD-protected environment when not in use.

For detailed information and specific applications, refer to the full datasheet provided by the manufacturer.

(For reference only)