Details

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BUY MT46V32M8P-5B:K https://www.utsource.net/itm/p/4912332.html

Parameter	Description	Value
Device	Memory Device	MT46V32M8P-5B:K
Type	SDRAM
Density	Density	256Mb (32M x 8)
Organization	Internal Organization	4 Banks
Supply Voltage (Vcc)	Supply Voltage	2.5V
Supply Voltage (Vccq)	I/O Supply Voltage	2.5V
Clock Frequency	Clock Frequency	100 MHz to 200 MHz
Access Time (tAC)	Access Time from CLK Edge	5.0 ns
CAS Latency (CL)	CAS Latency	2, 2.5, 3
Package Type	Package Type	BGA
Pin Count	Number of Pins	60
Operating Temperature	Operating Temperature Range	-40°C to +85°C
Data Width	Data Bus Width	8 bits
Refresh Rate	Refresh Rate	8.192ms (7.8us per 64K row)

Instructions for Use:

1. Power Supply Requirements: Ensure that the supply voltages Vcc and Vccq are set to 2.5V. Verify that the power supply is stable before applying any signals.
2. Clock Signal: The device supports clock frequencies between 100 MHz and 200 MHz. Ensure the clock signal is clean and meets the setup and hold times specified in the datasheet.
3. Initialization: After power-up, initialize the SDRAM by issuing a Precharge All command followed by a Mode Register Set command. The Mode Register should be configured according to the desired CAS latency and burst length.
4. Refresh Commands: To maintain data integrity, issue periodic refresh commands as specified by the refresh rate. Each refresh cycle must be completed within the 8.192ms interval.
5. Address and Control Signals: Carefully manage address and control signals to avoid bus contention and ensure proper timing with respect to the clock edge.
6. Temperature Considerations: Operate the device within the temperature range of -40°C to +85°C to ensure reliable performance.
7. Handling: Handle the device with care to prevent damage from electrostatic discharge (ESD). Use appropriate ESD protection measures during handling and installation.

For detailed specifications and further instructions, refer to the official datasheet provided by Micron Technology.

(For reference only)