MX25L4005CM2I-12G

MX25L4005CM2I-12G


Specifications
Details

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Parameter Symbol Conditions Min Typ Max Unit
Supply Voltage VCC Operating Condition 2.7 3.6 V
Standby Current ISB VCC = 3.0V 1 5 μA
Active Current IAV 15 mA
Programming Time TP 4 8 ms
Sector Erase Time TSE 200 400 ms
Chip Erase Time TCE 2 4 s
Page Program Time TPP 2 5 ms
Data Retention 20 years
Operating Temperature Topr -40 85 °C
Storage Temperature Tstg -40 85 °C

Instructions for MX25L4005CM2I-12G

  1. Power Supply Requirements:

    • Ensure the supply voltage (VCC) is within the range of 2.7V to 3.6V for stable operation.
  2. Initialization:

    • Before performing any operations, ensure the device has been properly initialized and the power supply is stable.
  3. Read Operations:

    • Use standard SPI commands to read data from the memory. The command typically starts with a read instruction followed by the address and then the data read.
  4. Write Operations:

    • Write Enable must be set before any write or erase operation.
    • After issuing a write command, wait for the Write in Progress (WIP) bit to clear before starting another write or read operation.
  5. Erase Operations:

    • For sector erase, use the appropriate command and specify the sector address.
    • For chip erase, use the chip erase command. Note the longer erase time required.
  6. Programming:

    • Page programming can be done up to the maximum page size at a time. Ensure that the page does not cross the boundary into another sector.
  7. Standby Mode:

    • To minimize power consumption, put the device into standby mode when not in use. This can be achieved by ensuring no active SPI transactions are occurring.
  8. Temperature Considerations:

    • Operate the device within the specified temperature range to avoid damage or data corruption.
  9. Data Integrity:

    • Ensure data retention requirements are met by avoiding excessive write/erase cycles and operating within the specified environmental conditions.
(For reference only)

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