Details

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BUY MX25L3206EM2I https://www.utsource.net/itm/p/4914497.html

Parameter	Symbol	Conditions	Min	Typ	Max	Unit
Supply Voltage	Vcc	Operating	2.7	-	3.6	V
Standby Current	ISB	VCC = 3.0V	1	-	5	μA
Active Current	IAV	VCC = 3.0V, TA=25°C	-	4	-	mA
Page Program Time	Tpp		-	3	-	ms
Sector Erase Time	Tse		-	300	-	ms
Bulk Erase Time	Tbe		-	35	-	s
Data Retention			20	-	-	years
Programming Cycle			100	-	-	k

Instructions for MX25L3206EM2I

1. Power Supply Setup:

   • Ensure the supply voltage (Vcc) is within the range of 2.7V to 3.6V.

2. Initialization:

   • After applying power, allow a brief stabilization period before issuing commands.

3. Reading Data:

   • Use the Read command to access data from the memory array.
   • Address lines should be correctly set to target the desired memory location.

4. Writing Data:

   • Before programming, ensure the write enable latch (WEL) is set by sending the Write Enable command.
   • Use the Page Program command to write data to the memory. Each page can hold up to 256 bytes.
   • Wait for the Page Program Time (Tpp) to complete before accessing the written data.

5. Erasing Sectors:

   • Send the Sector Erase command to erase 4K-byte sectors.
   • Allow sufficient time for the Sector Erase Time (Tse) to complete.

6. Bulk Erase:

   • For erasing the entire chip, use the Bulk Erase command.
   • Note the longer Bulk Erase Time (Tbe) required for this operation.

7. Standby Mode:

   • To minimize power consumption, put the device into standby mode when not actively reading or writing.

8. Data Retention and Endurance:

   • The device supports data retention for up to 20 years and can endure up to 100k programming cycles per sector.

9. Handling:

   • Handle with care to avoid damage to pins and ensure proper grounding to prevent electrostatic discharge (ESD).

For detailed command sequences and timing diagrams, refer to the datasheet provided by the manufacturer.

(For reference only)