Details

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BUY NAND04GW3B2DN6E https://www.utsource.net/itm/p/4923109.html
4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash memories

Parameter	Description	Value
Part Number	Full part number	NAND04GW3B2DN6E
Technology	Type of memory technology	NAND Flash
Density	Storage capacity	4 Gb (512 MB)
Organization	Memory organization	2048K x 16
Interface	Data interface	Toggle Mode 2.0
Voltage (Vcc)	Operating voltage	1.8V ± 0.1V
Clock Frequency	Maximum clock frequency	200 MHz
Data Rate	Maximum data transfer rate	400 MT/s
Package	Package type	WSON-16 (5x6)
Operating Temperature	Operating temperature range	-40°C to +85°C
Storage Temperature	Storage temperature range	-55°C to +125°C
Endurance	Program/Erase cycles	100,000 cycles
Retention	Data retention at 25°C	10 years
Access Time	Page read access time	35 μs
Write Time	Page program time	700 μs
Erase Time	Block erase time	1.5 ms
Input/Output (I/O)	Number of I/O pins	8
Standby Current	Standby current (typical)	50 μA
Active Current	Active current (typical)	150 mA

Instructions for Use:

1. Power Supply:

   • Ensure that the Vcc is within the specified range of 1.8V ± 0.1V.
   • Use a stable power supply to avoid voltage fluctuations.

2. Clock Signal:

   • Provide a stable clock signal with a maximum frequency of 200 MHz.
   • Ensure that the clock signal is clean and free from noise to maintain data integrity.

3. Data Transfer:

   • The device supports a maximum data transfer rate of 400 MT/s using the Toggle Mode 2.0 interface.
   • Use appropriate timing and control signals to manage data read and write operations.

4. Temperature Range:

   • Operate the device within the specified temperature range of -40°C to +85°C.
   • Store the device within the storage temperature range of -55°C to +125°C to ensure long-term reliability.

5. Endurance and Retention:

   • The device is rated for up to 100,000 program/erase cycles.
   • Data retention is guaranteed for 10 years at 25°C.

6. Pin Configuration:

   • Refer to the pin configuration diagram in the datasheet for correct pin connections.
   • Ensure proper grounding and decoupling capacitors are used to minimize noise and improve stability.

7. Initialization:

   • Follow the initialization sequence as outlined in the datasheet to configure the device correctly before use.
   • Use the appropriate command set to perform read, write, and erase operations.

8. Error Handling:

   • Monitor status registers and error flags to detect and handle any errors during operation.
   • Implement error correction mechanisms if required to maintain data integrity.

9. Programming:

   • Use the provided programming guidelines and command sequences to program and erase the memory.
   • Ensure that the device is properly configured before performing any write or erase operations.

10. Documentation:

    • Always refer to the latest datasheet and application notes for detailed information and updates.
    • Contact the manufacturer for technical support and additional resources if needed.

(For reference only)