Details

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BUY S29GL512S10TFI010 https://www.utsource.net/itm/p/5076689.html
IC FLASH 512M PARALLEL 56TSOP

Parameter	Description	Value	Unit
Device Type	Type of Memory Device	512 Mbit (64 MByte)	-
Memory Organization	Data Width x Number of Locations	8-bit x 64M	-
Package	Package Type	48-pin TSOP II	-
Operating Voltage (Vcc)	Supply Voltage Range	2.7 to 3.6	V
Standby Current (Typical)	Current Consumption in Standby Mode	5	μA
Active Current (Typical)	Current Consumption in Active Mode	60	mA
Access Time (Typical)	Time Required for a Read Operation	70	ns
Data Retention	Minimum Time Data is Retained	20	years
Temperature Range	Operating Temperature Range	-40 to +85	°C
Endurance	Number of Write/Erase Cycles	100,000	cycles
Write Time	Time Required for a Write Operation	2	ms
Sector Size	Size of Each Erasable Sector	64	KBytes
Block Size	Size of Each Erasable Block	8	KBytes
Programming Algorithm	Method Used for Programming	Byte/Word/Page Program	-
Erase Algorithm	Method Used for Erasing	Sector/Block/Chip Erase	-
Data Polling	Method to Check Completion of Operations	Busy/Ready Status Polling	-
Package Marking	Marking on the Package	S29GL512S10TFI010	-

Instructions:

1. Power Supply:

   • Ensure the supply voltage (Vcc) is within the range of 2.7V to 3.6V.
   • Connect the Vss pin to ground.

2. Addressing:

   • Use the address lines (A0-A22) to select the memory location.
   • The chip supports 23 address lines, allowing access to up to 8,388,608 (8M) addresses.

3. Data Input/Output:

   • Data is transferred through the data lines (DQ0-DQ7).
   • Ensure proper timing and synchronization for read and write operations.

4. Control Signals:

   • Chip Enable (CE#): Low to enable the device.
   • Output Enable (OE#): Low to enable data output.
   • Write Enable (WE#): Low to initiate a write operation.
   • Write Protect (WP#): High to allow writes, low to protect against writes.
   • HOLD (HOLD#): Low to pause operations.

5. Programming:

   • Use the byte, word, or page programming methods to write data.
   • Ensure the write time (2ms) is respected to avoid data corruption.

6. Erasing:

   • Use the sector, block, or chip erase commands to clear memory.
   • Ensure the erase time is respected to avoid incomplete erasure.

7. Status Checking:

   • Monitor the busy/ready status to determine when operations are complete.

8. Environmental Conditions:

   • Operate the device within the temperature range of -40°C to +85°C to ensure reliability.
   • Store the device in a dry environment to prevent moisture damage.

9. Handling:

   • Handle the device with care to avoid static discharge, which can damage the internal circuits.
   • Follow ESD (Electrostatic Discharge) guidelines during handling and installation.

(For reference only)