Details

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BUY S29AL008J70TFI010 https://www.utsource.net/itm/p/5078416.html
CMOS 3.0 Volt-only Boot Sector Flash Memory

Parameter	Description	Value
Device Type	Flash Memory	8 Mbit (1M x 8)
Package	TSOP II	44-Pin
Operating Voltage (Vcc)	Supply Voltage	2.7V to 3.6V
Standby Current (ISB)	Standby Mode	5 μA (max)
Active Current (IACT)	Active Mode	15 mA (max)
Access Time (tACC)	Access Time	70 ns (max)
Page Size	Page Size for Read/Program	256 bytes
Sector Size	Sector Size for Erase	64 Kbytes
Programming Time (tPROG)	Programming Time per Byte	10 μs (max)
Erase Time (tSE)	Sector Erase Time	200 ms (max)
Chip Erase Time (tCE)	Chip Erase Time	3 s (max)
Endurance	Program/Erase Cycles	100,000 cycles (min)
Data Retention	Data Retention at 25°C	100 years (min)
Operating Temperature (Toper)	Operating Temperature Range	-40°C to +85°C
Storage Temperature (Tstg)	Storage Temperature Range	-65°C to +150°C

Instructions:

1. Power Supply:

   • Connect Vcc to the supply voltage (2.7V to 3.6V).
   • Connect Vss to ground.

2. Addressing:

   • Use the address lines (A0-A19) to select the memory location.
   • The device supports up to 1M addresses (20 address lines).

3. Data I/O:

   • Use the data lines (D0-D7) for data input and output.

4. Control Signals:

   • /CE (Chip Enable): Low to enable the device.
   • /OE (Output Enable): Low to enable data output.
   • /WE (Write Enable): Low to initiate write operations.
   • /WP (Write Protect): High to allow write operations; low to protect against accidental writes.
   • /RST (Reset): High to reset the device.

5. Read Operation:

   • Set /CE and /OE low.
   • Apply the desired address to the address lines.
   • Data will be available on the data lines after the access time (tACC).

6. Write Operation:

   • Set /CE and /WE low.
   • Apply the desired address to the address lines.
   • Apply the data to the data lines.
   • Wait for the programming time (tPROG) before accessing the device again.

7. Erase Operation:

   • Set /CE low and /WE low.
   • Apply the sector address to the address lines.
   • Wait for the sector erase time (tSE) or chip erase time (tCE) depending on the operation.

8. Endurance and Data Retention:

   • Ensure that the number of program/erase cycles does not exceed 100,000 cycles.
   • Store the device in a temperature range of -65°C to +150°C to maintain data retention for up to 100 years at 25°C.

9. Handling Precautions:

   • Handle the device with care to avoid static discharge.
   • Ensure proper grounding and use anti-static wrist straps when handling the device.

(For reference only)