Details

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BUY VND5025BK https://www.utsource.net/itm/p/5382055.html

Parameter	Value	Unit
Device Type	N-Channel MOSFET
Package	TO-252 (DPAK)
Drain Source Voltage	55	V
Continuous Drain Current	18.5	A
Pulse Drain Current	60	A
Gate Source Voltage	±20	V
Gate Charge	34	nC
Input Capacitance	1750	pF
Output Capacitance	390	pF
RDS(on) at VGS=10V	0.018	Ω
Junction Temperature	-55 to +150	°C
Storage Temperature	-55 to +150	°C

Instructions for Use:

1. Handling Precautions:

   • Avoid exposing the device to excessive temperatures beyond the specified limits.
   • Handle with care to prevent damage to the leads and package.

2. Mounting:

   • Ensure proper heat sinking if operating near maximum current or power dissipation.
   • Follow standard soldering profiles suitable for TO-252 packages.

3. Electrical Connections:

   • Connect the gate, source, and drain terminals correctly to avoid damage.
   • Use appropriate gate drive circuits to ensure reliable switching.

4. Testing:

   • Test the device within the specified electrical parameters to ensure functionality.
   • Verify that the gate-source voltage does not exceed ±20V to prevent damage.

5. Storage:

   • Store in a dry environment away from direct sunlight and sources of heat.
   • Keep in original packaging until ready for use to protect against ESD.

(For reference only)