Details

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BUY VND5004ES https://www.utsource.net/itm/p/5382088.html

Parameter	Description	Value	Unit
Part Number	Full part number	VND5004ES	-
Type	N-channel enhancement mode MOSFET	-	-
Package	SOT-23	-	-
Drain Source Voltage (VDS)	Maximum voltage between drain and source	50	V
Continuous Drain Current (ID)	Maximum continuous current through the drain	1.1	A
Gate Threshold Voltage (VGS(th))	Gate-source voltage to start conduction	1.0 to 2.5	V
On-State Resistance (RDS(on))	Resistance between drain and source when fully on	0.85 (at VGS=4.5V)	Ω
Power Dissipation (PD)	Maximum power dissipation	370	mW
Operating Junction Temperature (TJ)	Range of operating temperatures	-55 to 150	°C

Instructions:

1. Handling Precautions: The VND5004ES is sensitive to electrostatic discharge (ESD). Handle with care using ESD-safe tools and practices.
2. Mounting: Ensure proper heat sinking if operating near maximum power dissipation limits.
3. Biasing: Apply gate voltages carefully; exceeding the gate threshold can cause damage.
4. Storage: Store in original packaging in a dry, cool place away from direct sunlight.
5. Soldering: Follow standard reflow soldering profiles for SOT-23 packages. Avoid excessive heat or prolonged exposure during soldering.

(For reference only)