Details

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BUY VND5E025AY https://www.utsource.net/itm/p/5382997.html

Parameter	Symbol	Min	Typ	Max	Unit	Conditions
Drain-Source On-State Resistance	RDS(on)	-	5.0	-	mΩ	VGS = 4.5V, ID = 10A
Continuous Drain Current	ID	-	-	25	A	Tc = 25°C
Pulse Drain Current	IDpeak	-	-	75	A	tp = 10ms, Tc = 25°C
Gate Charge	Qg	-	18	-	nC	VGS = 5V
Input Capacitance	Ciss	-	3600	-	pF	VDS = 10V, f = 1MHz
Total Power Dissipation	PD	-	-	220	W	TC = 25°C
Junction Temperature	TJ	-20	-	175	°C	-
Storage Temperature	Tstg	-55	-	150	°C	-

Instructions for Use:

1. Handling and Storage: Store the device in a dry, cool place away from direct sunlight. Handle with care to avoid damage to the leads and body.
2. Mounting: Ensure proper heat sinking if operating near maximum power dissipation limits. Follow recommended PCB layout guidelines for optimal thermal performance.
3. Electrical Connections: Verify all connections are secure and correctly wired according to circuit diagrams. Pay special attention to gate-source voltage levels to prevent damage.
4. Operation: Operate within specified temperature and current limits. Monitor junction temperature during high-load operations.
5. Testing: Before full-scale deployment, conduct thorough testing under expected operating conditions to ensure reliability and performance.

(For reference only)